N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type
CEP85N75
CEB85N75
CEF85N75
V
DSS
75V
75V
75V
R
DS(ON)
12mΩ
12mΩ
12mΩ
I
D
86A
86A
86A
e
CEP85N75/CEB85N75
CEF85N75
@V
GS
10V
10V
10V
D
Super high dense cell design for extremely low R
DS(ON)
.
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 package & TO-220F full-pak for through hole.
D
G
G
D
S
S
CEB SERIES
TO-263(DD-PAK)
G
G
CEP SERIES
TO-220
D
S
CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed
a
Maximum Power Dissipation @ T
C
= 25 C
- Derate above 25 C
Single Pulsed Avalanche Energy
d
Single Pulsed Avalanche Current
d
Tc = 25 C unless otherwise noted
Limit
Symbol
TO-220/263
TO-220F
V
DS
V
GS
I
D
I
DM
f
P
D
E
AS
I
AS
T
J
,T
stg
86
344
200
1.33
325
50
-55 to 175
75
Units
V
V
±
20
86
75
0.026
325
50
e
A
A
W
W/ C
mJ
A
C
344
e
Operating and Store Temperature Range
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
R
θJC
R
θJA
0.75
62.5
Limit
2
65
Units
C/W
C/W
Details are subject to change without notice .
1
Rev 3. 2008.Sep.
http://www.cetsemi.com
CET [ CHINO-EXCEL TECHNOLOGY ]
