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CET4401B 参数 Datasheet PDF下载

CET4401B图片预览
型号: CET4401B
PDF下载: 下载PDF文件 查看货源
内容描述: P沟道增强型场效应晶体管 [P-Channel Enhancement Mode Field Effect Transistor]
分类和应用: 晶体晶体管场效应晶体管
文件页数/大小: 4 页 / 387 K
品牌: CET [ CHINO-EXCEL TECHNOLOGY ]
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P-Channel Enhancement Mode Field Effect Transistor
FEATURES
-40V, -4.9A, R
DS(ON)
= 57mΩ @V
GS
= -10V.
R
DS(ON)
= 85mΩ @V
GS
= -4.5V.
High dense cell design for extremely low R
DS(ON)
.
Rugged and reliable.
Lead free product is acquired.
SOT-223 package.
D
CET4401B
D
G
SOT-223
D
S
G
S
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed
a
T
A
= 25 C unless otherwise noted
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
J
,T
stg
Limit
-40
Units
V
V
A
A
W
C
±
20
-4.9
-20
3
-55 to 150
Maximum Power Dissipation
Operating and Store Temperature Range
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient
b
Symbol
R
θJA
Limit
42
Units
C/W
Specification and data are subject to change without notice .
1
Rev 1. 2006.January
http://www.cetsemi.com