CED2303/CEU2303
P-Channel Enhancement Mode Field Effect Transistor
FEATURES
-30V, -9A, R
DS(ON)
= 200mΩ @V
GS
= -10V.
R
DS(ON)
= 320mΩ @V
GS
= -4.5V.
Super high dense cell design for extremely low R
DS(ON)
.
High power and current handing capability.
Lead free product is acquired.
TO-251 & TO-252 package.
D
PRELIMINARY
D
G
S
CEU SERIES
TO-252(D-PAK)
G
D
G
S
CED SERIES
TO-251(I-PAK)
S
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed
a
Tc = 25 C unless otherwise noted
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
J
,T
stg
Limit
-30
Units
V
V
A
A
W
W/ C
C
±
20
-9
-27
33
0.22
-55 to 175
Maximum Power Dissipation @ T
C
= 25 C
- Derate above 25 C
Operating and Store Temperature Range
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
R
θJC
R
θJA
Limit
4.5
50
Units
C/W
C/W
2004.November
6 - 46
http://www.cetsemi.com
CET [ CHINO-EXCEL TECHNOLOGY ]
