Dual Enhancement Mode Field Effect Transistor (N and P Channel)
CEU4269
FEATURES
D1/D2
40V , 14A , R
DS(ON)
= 32mΩ @V
GS
= 10V.
R
DS(ON)
= 46mΩ @V
GS
= 4.5V.
-40V , -12A , R
DS(ON)
= 45mΩ @V
GS
= 10V.
R
DS(ON)
= 65mΩ @V
GS
= 4.5V.
Super high dense cell design for extremely low R
DS(ON)
.
High power and current handing capability.
Lead free product is acquired.
TO-252-4L package.
S1
G1
S2
G2
CEU SERIES
TO-252-4L
D1/D2
G1
G2
S1
S2
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed
a
e
Tc = 25 C unless otherwise noted
Symbol
V
DS
V
GS
I
D
e
N-Channel
40
P-Channel
40
Units
V
V
A
A
W
W/ C
C
±
20
14
56
10.4
0.08
-55 to 150
±
20
-12
-48
I
DM
P
D
T
J
,T
stg
Maximum Power Dissipation @ T
C
= 25 C
- Derate above 25 C
Operating and Store Temperature Range
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
R
θJC
R
θJA
Limit
12
50
Units
C/W
C/W
Details are subject to change without notice .
1
Rev 2. 2010.Aug
http://www.cetsemi.com
CET [ CHINO-EXCEL TECHNOLOGY ]
