CED540N/CEU540N
80
V
GS
=10,9V
60
50
40
30
20
10
0
T
J
=125 C
2
4
25 C
-55 C
6
8
I
D
, Drain Current (A)
60
V
GS
=8V
40
V
GS
=7V
20
V
GS
=6V
V
GS
=5V
0
0
1
2
3
4
5
6
I
D
, Drain Current (A)
V
DS
, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
2400
2000
1600
1200
800
400
0
Coss
Crss
0
5
10
15
20
25
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
V
GS
, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
I
D
=18A
V
GS
=10V
Ciss
R
DS(ON),
Normalized
R
DS(ON)
, On-Resistance(Ohms)
C, Capacitance (pF)
-50
0
50
100
150
200
V
DS
, Drain-to-Source Voltage (V)
Figure 3. Capacitance
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50
V
DS
=V
GS
T
J
, Junction Temperature( C)
Figure 4. On-Resistance Variation
with Temperature
I
S
, Source-drain current (A)
V
GS
=0V
10
2
V
TH
, Normalized
Gate-Source Threshold Voltage
I
D
=250µA
10
1
-25
0
25
50
75
100
125
150
10
0
0.4
0.6
0.8
1.0
1.2
1.4
T
J
, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
V
SD
, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
3
CET [ CHINO-EXCEL TECHNOLOGY ]
