CED6601/CEU6601
50
-V
GS
=10,8V
25
-I
D
, Drain Current (A)
40
-I
D
, Drain Current (A)
20
-V
GS
=6V
30
15
20
-V
GS
=5V
10
25 C
5
T
J
=125 C
0
-55 C
2
3
4
5
6
10
-V
GS
=4V
-V
GS
=3V
0
0
3
6
9
12
15
18
0
1
-V
DS
, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
1500
1250
1000
750
500
250
0
Crss
0
5
10
15
20
25
30
Coss
Ciss
2.2
1.9
1.6
1.3
1.0
0.7
0.4
-100
-V
GS
, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
R
DS(ON),
Normalized
R
DS(ON)
, On-Resistance(Ohms)
I
D
=-8A
V
GS
=-10V
C, Capacitance (pF)
-50
0
50
100
150
200
-V
DS
, Drain-to-Source Voltage (V)
Figure 3. Capacitance
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50
T
J
, Junction Temperature( C)
Figure 4. On-Resistance Variation
with Temperature
-I
S
, Source-drain current (A)
10
2
V
TH
, Normalized
Gate-Source Threshold Voltage
V
DS
=V
GS
I
D
=-250µA
V
GS
=0V
10
1
10
0
10
-25
0
25
50
75
100
125
150
-1
0.4
0.6
0.8
1.0
1.2
1.4
T
J
, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
-V
SD
, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
3