N-Channel Enhancement Mode Field Effect Transistor
FEATURES
400V, 5A, R
DS(ON)
= 1Ω @V
GS
= 10V.
Super high dense cell design for extremely low R
DS(ON)
.
High power and current handing capability.
Lead free product is acquired.
TO-251 & TO-252 package.
CED730G/CEU730G
PRELIMINARY
D
D
G
S
CEU SERIES
TO-252(D-PAK)
G
D
G
S
CED SERIES
TO-251(I-PAK)
S
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed
a
Tc = 25 C unless otherwise noted
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
J
,T
stg
Limit
400
Units
V
V
A
A
W
W/ C
C
±
30
5
20
68
0.54
-55 to 150
Maximum Power Dissipation @ T
C
= 25 C
- Derate above 25 C
Operating and Store Temperature Range
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
R
θJC
R
θJA
Limit
2.2
50
Units
C/W
C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 1. 2009.Nov
http://www.cetsemi.com