CM2835
300mA CMOS LDO
ELECTRICAL CHARACTERISTICS
T
A
= +25℃; unless otherwise noted
CM2835
Min.
Note 1
I
O
= 1mA to 300mA
I
O
= 300mA,
V
OUT
=V
O(NOM)
-1.5%,
1.2V<V
O(NOM)
≤
2.0V
2.0V<V
O(NOM)
≤
2.5V
2.5V<V
O(NOM)
300
300
450
30
30
-0.1
0.02
0.2
150
30
40
I
O
= 100mA
C
O
=2.2μF ceramic
I
O
= 100mA
Power Supply Rejection
PSRR
C
O
=2.2μF ceramic
C
BYP
=0.01μF
Output Voltage Noise
Output Voltage Noise
Note 1.
V
IN(MIN)
= V
OUT
+ V
DROPOUT
Parameter
Input Voltage
Output Voltage Accuracy
Dropout Voltage
Output Current
Current Limit
Quiescent Current
Ground Pin Current
Line Regulation
Load Regulation
Over Temperature Shutdown
Over Temperature Hysteresis
V
OUT
Temperature Coefficient
Power Supply Rejection
Symbol
V
IN
V
OUT
V
DROPOUT
I
O
I
LIM
I
Q
I
GND
REG
LINE
REG
LOAD
OTS
OTH
TC
Test Conditions
Typ.
Max.
7
1.5
1300
400
300
Unit
V
%
mV
mA
mA
-1.5
V
OUT
> 1.2V
V
OUT
> 1.2V
I
O
= 0mA
I
O
= 1mA to 300mA
I
OUT
=5mA, V
IN
=V
OUT
+1 to V
OUT
+2
I
O
=1mA to 300mA
35
50
0.1
1
μA
μA
%
%
℃
℃
ppm/℃
dB
f=1kHz
f=10kHz
f=100kHz
f=1kHz
f=10kHz
f=100kHz
C
O
=2.2μF
C
O
=100μF
C
O
=2.2μF
C
O
=100μF
60
50
40
75
55
30
30
20
30
20
μVrms
μVrms
dB
PSRR
eN
eN
f=10Hz to 100kHz
I
O
= 10mA, C
BYP
=0μF
f=10Hz to 100kHz
I
O
= 10mA, C
BYP
=0.01μF
2006/10/11 Rev1.4
Champion Microelectronic Corporation
Page 4