CMT02N60
P
OWER
F
IELD
E
FFECT
T
RANSISTOR
GENERAL DESCRIPTION
This high voltage MOSFET uses an advanced termination
scheme to provide enhanced voltage-blocking capability
without degrading performance over time. In addition, this
advanced MOSFET is designed to withstand high energy in
avalanche and commutation modes. The new energy
efficient design also offers a drain-to-source diode with a
fast recovery time. Designed for high voltage, high speed
switching applications in power supplies, converters and
PWM motor controls, these devices are particularly well
suited
for
bridge
circuits
where
diode
speed
and
commutating safe operating areas are critical and offer
additional and safety margin against unexpected voltage
transients.
FEATURES
Robust High Voltage Termination
Avalanche Energy Specified
Source-to-Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
I
DSS
and V
DS
(on) Specified at Elevated Temperature
PIN CONFIGURATION
TO-220/TO-220FP
TO-251
SYMBOL
N-Channel MOSFET
Front View
Front View
D
SOURCE
SOURCE
DRAIN
GATE
DRAIN
GATE
G
1
2
3
S
1
2
3
ABSOLUTE MAXIMUM RATINGS
Rating
Drain to Current
-
Continuous
-
Pulsed
Gate-to-Source Voltage
-
Continue
-
Non-repetitive
Total Power Dissipation
TO-251
TO-220
TO-220FP
Operating and Storage Temperature Range
Single Pulse Drain-to-Source Avalanche Energy
-
T
J
= 25℃
(V
DD
= 100V, V
GS
= 10V, I
L
= 2A, L = 10mH, R
G
= 25Ω)
Thermal Resistance
-
Junction to Case
-
Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds
θ
JC
θ
JA
T
L
1.0
62.5
260
℃
℃/W
T
J
, T
STG
E
AS
Symbol
I
D
I
DM
V
GS
V
GSM
P
D(Max)
30
83
30
-55 to 150
20
℃
mJ
W
Value
2.0
4.0
±20
±40
V
V
Unit
A
2009/08/06
Rev. 1.4
Champion Microelectronic Corporation
Page 1