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CMT04N60_11 参数 Datasheet PDF下载

CMT04N60_11图片预览
型号: CMT04N60_11
PDF下载: 下载PDF文件 查看货源
内容描述: 功率MOSFET [POWER MOSFET]
分类和应用:
文件页数/大小: 8 页 / 342 K
品牌: CHAMP [ CHAMPION MICROELECTRONIC CORP. ]
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CMT04N60
POWER MOSFET
GENERAL DESCRIPTION
This advanced high voltage MOSFET is designed to
withstand high energy in the avalanche mode and switch
efficiently. This new high energy device also offers a
drain-to-source diode with fast recovery time. Designed for
high voltage, high speed switching applications such as
power supplies, converters, power motor controls and
bridge circuits.
FEATURES
Higher Current Rating
Lower Rds(on)
Lower Capacitances
Lower Total Gate Charge
Tighter VSD Specifications
Avalanche Energy Specified
PIN CONFIGURATION
TO-220/TO-220FP
TO-252
SYMBOL
D
Front View
Front View
GATE
SOURCE
DRAIN
G
S
1
2
3
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
Rating
Drain to Current
Continuous
Pulsed
Gate-to-Source Voltage
Continue
Non-repetitive
Total Power Dissipation
TO-220
TO-220FP
Operating and Storage Temperature Range
Single Pulse Drain-to-Source Avalanche Energy
T
J
= 25℃
(V
DD
= 100V, V
GS
= 10V, I
L
= 4A, L = 10mH, R
G
= 25Ω)
Thermal Resistance
Junction to Case
Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds
θ
JC
θ
JA
T
L
1.30
100
260
℃/W
T
J
, T
STG
E
AS
Symbol
I
D
I
DM
V
GS
V
GSM
P
D
83
30
-55 to 150
80
mJ
Value
4.0
14
±30
±40
V
V
W
Unit
A
2011/03/23
Rev. 1.5
Champion Microelectronic Corporation
Page 1