CMT04N60
POWER MOSFET
ORDERING INFORMATION
Part Number
CMT04N60GN220*
CMT04N60XN220*
CMT04N60GN220FP*
CMT04N60XN220FP*
CMT04N60GN252*
Package
TO-220
TO-220
TO-220 Full Package
TO-220 Full Package
TO-252
CMT04N60XN252*
TO-252
*Note:
G : Suffix for Pb Free Product
X : Suffix for Halogen and Pb Free Product
ELECTRICAL CHARACTERISTICS
Characteristic
Drain-Source Breakdown Voltage
(V
GS
= 0 V, I
D
= 250
μA)
Drain-Source Leakage Current
(V
DS
=600 V, V
GS
= 0 V)
Gate-Source Leakage Current-Forward
(V
gsf
= 30 V, V
DS
= 0 V)
Gate-Source Leakage Current-Reverse
(V
gsr
= - 30 V, V
DS
= 0 V)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 250
μA)
(Unless otherwise specified, T
J
= 25℃.)
CMT04N60
Symbol
V
(BR)DSS
I
DSS
1
I
GSSF
I
GSSR
V
GS(th)
R
DS(on)
g
FS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
L
D
L
S
2.5
540
125
8.0
12
7.0
19
10
5.0
2.7
2.0
4.5
7.5
760
180
20
20
10
40
20
10
2.0
100
100
4.0
2.2
nA
nA
V
Ω
mhos
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
nH
nH
Min
600
Typ
Max
Units
V
uA
Static Drain-Source On-Resistance (V
GS
= 10 V, I
D
= 2.0A) *
Forward Transconductance (V
DS
= 50 V, I
D
= 2.0 A) *
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Internal Drain Inductance
(Measured from the drain lead 0.25” from package to center of die)
Internal Drain Inductance (Measured from the source lead 0.25” from
package to source bond pad)
SOURCE-DRAIN DIODE CHARACTERISTICS
Forward On-Voltage(1)
Forward Turn-On Time
Reverse Recovery Time
(I
S
= 4.0 A,
d
IS
/d
t
= 100A/μs)
(V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz)
(V
DD
= 300 V, I
D
= 4.0 A,
V
GS
= 10 V,
R
G
= 9.1Ω) *
(V
DS
= 480 V, I
D
= 4.0 A,
V
GS
= 10 V)*
V
SD
t
on
t
rr
**
655
1.5
V
ns
ns
* Pulse Test: Pulse Width
≦300μs,
Duty Cycle
≦2%
** Negligible, Dominated by circuit inductance
2011/03/23
Rev. 1.5
Champion Microelectronic Corporation
Page 2
CHAMP [ CHAMPION MICROELECTRONIC CORP. ]
