CMT05N50
P
OWER
MOSFET
GENERAL DESCRIPTION
This Power MOSFET is designed for low voltage, high
speed power switching applications such as switching
regulators, conveters, solenoid and relay drivers.
FEATURES
Higher Current Rating
Lower r
DS(ON)
, Lower Capacitances
Lower Total Gate Charge
Tighter VSD Specifications
Avalanche Energy Specified
PIN CONFIGURATION
TO-220/TO-220FP
SYMBOL
D
Top View
GATE
SOURCE
DRAIN
G
S
1
2
3
N-Channel MOSFET
ORDERING INFORMATION
Part Number
CMT05N50N220
CMT05N50N220FP
Package
TO-220
TO-220FP
ABSOLUTE MAXIMUM RATINGS
Rating
Drain to Current
－
Continuous
－
Pulsed (Note 1)
Gate-to-Source Voltage
－
Continue
Total Power Dissipation
Derate above 25℃
Single Pulse Avalanche Energy (Note 2)
Operating and Storage Temperature Range
Thermal Resistance
－
Junction to Case
－
Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds
E
AS
T
J
, T
STG
θ
JC
θ
JA
T
L
Symbol
I
D
I
DM
V
GS
P
D
Value
5.0
18
±20
96
0.77
125
-55 to 150
1.70
62
300
℃
V
W
W/℃
mJ
℃
℃/W
Unit
A
2006/10/11
Rev. 1.1
Champion Microelectronic Corporation
Page 1
CHAMP [ CHAMPION MICROELECTRONIC CORP. ]
