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CMT08N50 参数 Datasheet PDF下载

CMT08N50图片预览
型号: CMT08N50
PDF下载: 下载PDF文件 查看货源
内容描述: 功率场效应晶体管 [POWER FIELD EFFECT TRANSISTOR]
分类和应用: 晶体晶体管功率场效应晶体管
文件页数/大小: 7 页 / 219 K
品牌: CHAMP [ CHAMPION MICROELECTRONIC CORP. ]
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CMT08N50
P
OWER
F
IELD
E
FFECT
T
RANSISTOR
GENERAL DESCRIPTION
This high voltage MOSFET uses an advanced termination
scheme to provide enhanced voltage-blocking capability
without degrading performance over time. In addition, this
advanced MOSFET is designed to withstand high energy
in avalanche and commutation modes. The new energy
efficient design also offers a drain-to-source diode with a
fast recovery time. Designed for high voltage, high speed
switching applications in power supplies, converters and
PWM motor controls, these devices are particularly well
suited for bridge circuits where diode speed and
commutating safe operating areas are critical and offer
additional and safety margin against unexpected voltage
transients.
FEATURES
Robust High Voltage Termination
Avalanche Energy Specified
Source-to-Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
I
DSS
and V
DS
(on) Specified at Elevated Temperature
PIN CONFIGURATION
TO-220/TO-220FP
SYMBOL
D
Top View
GATE
SOURCE
DRAIN
G
S
1
2
3
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
Rating
Drain to Current
Continuous
Pulsed
Gate-to-Source Voltage
Continue
Non-repetitive
Total Power Dissipation
TO-220
TO-220FP
Operating and Storage Temperature Range
Single Pulse Drain-to-Source Avalanche Energy
T
J
= 25℃
(V
DD
= 100V, V
GS
= 10V, I
L
= 8A, L = 10mH, R
G
= 25Ω)
Thermal Resistance
Junction to Case
Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds
θ
JC
θ
JA
T
L
1.0
62.5
260
℃/W
T
J
, T
STG
E
AS
Symbol
I
D
I
DM
V
GS
V
GSM
P
D(Max)
83
30
-55 to 150
320
mJ
Value
8.0
24
±30
±40
V
V
W
Unit
A
2009/07/28
Rev. 1.2
Champion Microelectronic Corporation
Page 1