CMT2301
P-C
HANNEL
E
NHANCEMENT
M
ODE
M
OSFET
GENERAL DESCRIPTION
The CMT2301 is the P-Channel logic enhancement mode
power field effect transistors are produced using high cell
density, DMOS trench technology.
This high density process is especially tailored to minimize
on-state resistance.
These devices are particularly suited for low voltage
application such as cellular phone and notebook computer
power management and other battery powered circuits, and
low in-line power loss are needed in a very small outline
surface mount package.
FEATURES
-20V/-2.3A ,R
DS(ON)
=130 mΩ@VGS=-4.5V
-20V/-1.9A ,R
DS(ON)
=190 mΩ@VGS=-2.5V
Super high density cell design for extremely low R
DS(ON)
Exceptional on-resistance and maximum DC current
capability
SOT-23-3 package design
APPLICATIONS
Power Management in Notebook
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter
PIN CONFIGURATION
SOT-23-3
SYMBOL
D
Top View
3
G
DRAIN
SOURCE
GATE
S
1
2
P-Channel MOSFET
ORDERING INFORMATION
Part Number
CMT2301M233
CMT2301GM233*
*Note:
G : Suffix for Pb Free Product
Package
SOT-23-3
SOT-23-3
2006/10/11 Rev1.2
Champion Microelectronic Corporation
Page 1
CHAMP [ CHAMPION MICROELECTRONIC CORP. ]
