CMT2N7002
S
MALL
S
IGNAL
MOSFET
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, T
J
= 25℃.
Characteristic
Symbol
Min
CMT2N7002
Typ
Max
Units
V
Drain-Source Breakdown Voltage
(V
GS
= 0 V, I
D
= 10
μA)
Drain-Source Leakage Current
(V
DS
= 60 V, V
GS
= 0 V)
(V
DS
= 60 V, V
GS
= 0 V, T
J
= 125℃)
Gate-Source Leakage Current-Forward (V
gsf
= 20 V)
Gate-Source Leakage Current-Reverse (V
gsf
= -20 V)
Gate Threshold Voltage *
(V
DS
= V
GS
, I
D
= 250
μA)
On-State Drain Current (V
DS
≧
2.0 V
DS(on)
, V
GS
= 10V)
Static Drain-Source On-Resistance *
(V
GS
= 10 V, I
D
= 0.5A)
(V
GS
= 10 V, I
D
= 0.5A, T
J
= 125℃)
(V
GS
= 5.0 V, I
D
= 50mA)
(V
GS
= 5.0 V, I
D
= 50mA, T
J
= 125℃)
Drain-Source On-Voltage *
(V
GS
= 10 V, I
D
= 0.5A)
(V
GS
= 5.0 V, I
D
= 50mA)
Forward Transconductance (V
DS
≧
2.0 V
DS(on)
, I
D
= 200mA) *
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-Off Delay Time
(V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz)
(V
DD
= 25 V, I
D
= 500 mA,
V
gen
= 10 V, R
G
= 25Ω, R
L
= 50Ω) *
V
(BR)DSS
60
I
DSS
1.0
0.5
I
GSSF
I
GSSF
V
GS(th)
1.0
100
-100
2.5
μA
mA
nA
nA
V
I
d(on)
R
DS(on)
500
mA
Ω
7.5
13.5
7.5
13.5
V
DS(on)
3.75
0.375
g
FS
C
iss
C
oss
C
rss
t
d(on)
t
d(off)
V
SD
I
S
I
SM
80
50
25
5.0
20
40
-1.5
-115
-800
V
mmhos
pF
pF
pF
ns
ns
V
mA
mA
Diode Forward On-Voltage (IS = 115 mA, VGS = 0V)
Source Current Continuous (Body Diode)
Source Current Pulsed
* Pulse Test: Pulse Width
≦300μs,
Duty Cycle
≦2%
2009/07/17
Rev. 1.8
Champion Microelectronic Corporation
Page 2
CHAMP [ CHAMPION MICROELECTRONIC CORP. ]
