CMT2N7002K
S
MALL
S
IGNAL
MOSFET
GENERAL DESCRIPTION
This N-Channel enhancement mode field effect transistor is
produced using high cell density, DMOS technology. These
products have been designed to minimize on-state resistance
while provide rugged, reliable, and fast switching and ESD
enhanced performance. It can be used in most applications
requiring up to 115mA DC and can deliver pulsed currents up
to 800mA. This product is particularly suited for low voltage, low
current applications such as small servo motor control, power
MOSFET gate drivers, and other switching applications.
FEATURES
High Density Cell Design for Low R
DS(ON)
Voltage Controlled Small Signal Switch
Rugged and Reliable
High Saturation Current Capability
ESD Protected 2KV HBM
PIN CONFIGURATION
SOT-23
SYMBOL
TOP View
3
DRAIN
SOURCE
GATE
1
2
N-Channel MOSFET
ORDERING INFORMATION
Part Number
CMT2N7002K
CMT2N7002KX*
Package
SOT-23
SOT-23
*Note:
X : Suffix for Halogen Free Product
ABSOLUTE MAXIMUM RATINGS
Rating
Drain Source Voltage
Drain-Gate Voltage (R
GS
= 1.0MΩ)
Drain to Current
-
Continuous
-
Pulsed
Gate-to-Source Voltage
-
Continue
-
Non-repetitive
Total Power Dissipation
Derate above 25℃
Operating and Storage Temperature Range
Thermal Resistance
-
Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds
T
J
, T
STG
θ
JA
T
L
Symbol
V
DSS
V
DGR
I
D
I
DM
V
GS
V
GSM
P
D
Value
60
60
115
800
±15
±15
225
1.8
-55 to 150
417
300
V
V
mW
mW/℃
℃
℃/W
℃
Unit
V
V
mA
2010/03/23
Rev. 1.2
Champion Microelectronic Corporation
Page 1