CMT35N03G
25V N-C
HANNEL
E
NHANCEMENT
-M
ODE
M
OSFET
APPLICATION
Vds=25V
R
DS(ON)
=8.5 mΩ (Max.) , VGS
@10V,
Ids@30A
R
DS(ON)
=13 mΩ (Max.), VGS
@4.5V,
Ids@30A
FEATURES
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
Fully Characterized Avalanche Voltage and Current
PIN CONFIGURATION
TO-252
SYMBOL
D
Front View
GATE
SOURCE
DRAIN
G
S
1
2
3
N-Channel MOSFET
Maximum Ratings and Thermal Characteristics
(TA=25℃ unless otherwise notes)
Rating
Drain - Source Voltage
Gate -Source Voltage
Continuous Drain Current
Pulsed Drain Current
1)
Symbol
V
DS
V
GS
I
D
I
DM
T
A
=25℃
T
A
=75℃
P
D
P
D
T
J
/ T
STG
R
θJC
2)
Value
25
±20
30
260
60
23
-55 to150
1.8
50
Unit
V
V
A
A
W
W
℃
℃/W
℃/W
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Junction – to –Case Thermal Resistance
Junction – to Ambient Thermal Resistance (PCB mount)
R
θJA
Note : 1. Repetitive Rating : Pulse width limited by the Maximum junction temperation
2
2. 1-in 2oz Cu PCB board
3. Guaranteed by design ; not subject to production testing
2007/03/15 Rev1.0
Champion Microelectronic Corporation
Page 1
CHAMP [ CHAMPION MICROELECTRONIC CORP. ]
