CMT60N03G
N-C
HANNEL
Logic Level Power M
OSFET
APPLICATION
Buck Converter High Side Switch
Other Applications
V
DSS
30V
R
DS(ON)
Typ.
10.8mΩ
I
D
50A
FEATURES
Low ON Resistance
Low Gate Charge
Peak Current vs Pulse Width Curve
Inductive Switching Curves
Improved UIS Ruggedness
PIN CONFIGURATION
TO-252
TO-263
SYMBOL
D
Front View
Front View
D
SOURCE
DRAIN
GATE
G
1
2
3
S
G
1
2
3
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
Rating
Drain to Source Voltage (Note 1)
Drain to Current
－
Continuous Tc = 25℃, V
GS
@10V (Note 2)
－
Continuous Tc = 100℃, V
GS
@10V (Note 2)
－
Pulsed Tc = 25℃, V
GS
@10V (Note 3)
Gate-to-Source Voltage
－
Continue
Total Power Dissipation
Derating Factor above 25℃
Peak Diode Recovery dv/dt (Note 4)
Operating Junction and Storage Temperature Range
Single Pulse Avalanche Energy L=1.1mH,I
D
=30 Amps
Maximum Lead Temperature for Soldering Purposes
Maximum Package Body for 10 seconds
Pulsed Avalanche Rating
dv/dt
T
J
, T
STG
E
AS
T
L
T
PKG
I
AS
Symbol
V
DSS
I
D
I
D
I
DM
V
GS
P
D
Value
30
50
Fig.3
Fig.6
±20
52
0.5
3.0
-55 to 150
500
300
260
Fig.8
V
W
W/℃
V/ns
℃
mJ
℃
℃
Unit
V
A
THERMAL RESISTANCE
Symbol
R
θJC
R
θJA
R
θJA
Parameter
Junction-to-case
Junction-to-ambient
(PCB Mount)
Junction-to-ambient
Min
Typ
Max
2.4
50
62
Units
℃/W
℃/W
℃/W
Test Conditions
Water cooled heatsink, P
D
adjusted for a peak junction
temperature of +150℃
Minimum pad area, 2-oz copper, FR-4 circuit board, double
sided
1 cubic foot chamber, free air
2006/10/11 Rev1.2
Champion Microelectronic Corporation
Page 1
CHAMP [ CHAMPION MICROELECTRONIC CORP. ]
