B5817W THRU B5819W
SCHOTTKY DIODE
SOD-123
1.80(.071)
1.40(.055)
1.65(.065)
1.55(.061)
FEATURES
For use in low voltage, high frequency inverters
Free wheeling, and polanty protection applications
3.86(0.152)
3.56(0.145)
2.84(0.112)
2.54(0.100)
3.9(0.154)
3.7(0.146)
2.7(0.106)
2.6(0.102)
.71(0.028)
.50(0.020)
.15(.006)
MAX
1.35(.053)
.94(.037)
.135(.005)
.127(.004)
0.6(.023)
0.5(.020)
1.15(.045)
1.05(.041)
MECHANICAL DATA
Case:
Molded plastic body
Terminals:
Plated leads solderable per MIL-STD-750,
Method 2026
Polarity:
Polarity symbols marked on case
Marking:
B5817W:SJ, B5818W:SK, B5819W:SL
.25(.010)
MIN
Dimensions in millimeters and (inches)
Maximum ratings and electrical characteristics, Single diode @T
A
=25C
PARAMETER
Peak repetitive peak reverse voltage
Working peak reverse voltage
DC Blocking voltage
RMS Reverse voltage
Average rectified output current
Peak forward surge current @=8.3ms
Repetitive peak forward current
Power dissipation
Thermal resistance junction to ambient
Storage temperature
Non-Repetitive peak reverse voltage
Electrical ratings @T
A
=25C
PARAMETER
Reverse breakdown voltage
SYMBOLS
B5817W
20
14
B5818W
30
21
1
9
1.5
250
500
-65 to +150
30
Max.
Unit
V
V
V
1
0.45
0.75
V
V
V
I
F
=1A
I
F
=3A
0.55
mA
V
R
=20V
V
R
=30V
V
R
=40V
B5819W
40
28
UNITS
V
V
A
A
A
mW
K/W
C
V
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
I
FRM
Pd
R
ΘJA
T
STG
V
RM
Min.
20
V
(BR)
30
40
20
40
Test conditions
I
R
=1mA
B5817W
B5818W
B5819W
B5817W
B5818W
B5819W
B5817W
B5818W
B5819W
V
R
=4V,f=1.0MHz
SYMBOLS
Reverse voltage leakage current
I
R
Forward voltage
V
F
0.875
0.6
0.9
Diode capacitance
C
D
120
pF
MDD ELECTRONIC
CHENDA [ Chendahang Electronics Co., Ltd ]
