B5817WS-B5819WS
SCHOTTKY BARRIER DIODE
SOD-323
1.35(0.053)
1.15(0.045)
1.26(.050)
1.24(.048)
FEATURES
For use in low voltage, high frequency inverters
Free wheeling, and polanty protection applications
2.75(0.108)
2.30(0.091)
1.80(0.071)
1.60(0.063)
2.75(0.108)
2.30(0.091)
1.80(0.071)
1.60(0.063)
MECHANICAL DATA
0.4(0.016)
.25(0.010)
.177(.007)
.089(.003)
1.00(.040)
0.80(.031)
0.1(0.004)
MIN
.305(0.012)
.295(0.010)
.72(0.028)
.69(0.027)
.08(.003)
MIN
Case:
Molded plastic body
Terminals:
Plated leads solderable per MIL-STD-750,
Method 2026
Polarity:
Polarity symbols marked on case
Marking:
B5817W:SJ, B5818W:SK, B5819W:SL
Dimensions in millimeters and (inches)
Maximum ratings and electrical characteristics, Single diode @TA=25C
PARAMETER
Peak repetitive peak reverse voltage
Working peak
DC Blocking voltage
RMS Reverse voltage
Average rectified output current
Peak forward surge current @=8.3ms
Repetitive peak forward current
Power dissipation
Thermal resistance junction to ambient
Storage temperature
Non-Repetitive peak reverse voltage
Electrical ratings @T
A
=25C
PARAMETER
Reverse breakdown voltage
SYMBOLS
B5817WS
20
14
B5818WS
30
21
1
9
625
200
625
-65 to +150
30
B5819WS
40
28
UNITS
V
V
A
A
mA
mW
K/W
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
I
FRM
Pd
R
ΘJA
T
STG
V
RM
C
40
V
20
SYMBOLS
Min.
20
30
40
Max.
Unit
V
V
V
Test conditions
I
R
=1mA
V
R
=20V
B5817WS
B5818WS
B5819WS
B5817WS
B5818WS
B5819WS
B5817WS
I
F
=1A
I
F
=3A
B5818WS
B5819WS
V
R
=4V,f=1.0MHz
V
(BR)
Reverse voltage leakage current
I
R
1
0.45
0.75
V
F
0.55
0.875
0.6
0.9
V
V
V
mA
V
R
=30V
V
R
=40V
Forward voltage
Diode capacitance
C
D
120
pF
MDD ELECTRONIC
CHENDA [ Chendahang Electronics Co., Ltd ]
