DSR1A THRU DSR1M
SUFACE MOUNT GENERAL PURPOSE SILICON RECTIFIER
Reverse Voltage - 50 to 1000 Volts
Forward Current - 1.0 Ampere
SOD-123FL
Cathode Band
Top View
FEATURES
Glass passivated device
Ideal for surface mouted applications
Low reverse leakage
Metallurgically bonded construction
High temperature soldering guaranteed:
250 C/10 seconds,0.375
”
(9.5mm) lead length,
5 lbs. (2.3kg) tension
2.8
±
0.1
1.3± 0.15
0.10-0.30
0.6
±
0.25
１．０±
0.2
1.8± 0.1
MECHANICAL DATA
Case
: JEDEC SOD-123FL molded plastic body over passivated chip
Terminals
: Solderable per MIL-STD-750,
Method 2026
Polarity
: Color band denotes cathode end
Mounting Position
: Any
Weight
:0.006 ounce, 0.02 grams
3.7
±
0.2
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
SYMBOLS
DSR1A DSR1B DSR1D DSR1G DSR1J
S1A
S1B
S1D
S1G
S1J
MDD Catalog Number
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at T
A
=65 C (NOTE 1)
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method) T
L
=25 C
Maximum instantaneous forward voltage at 1.0A
Maximum DC reverse current
T
A
=25 C
at rated DC blocking voltage
T
A
=125 C
Typical junction capacitance (NOTE 2)
Typical thermal resistance (NOTE 3)
Operating junction and storage temperature range
V
RRM
V
RMS
V
DC
I
(AV)
DSR1K DSR1M UNITS
S1K
S1M
50
35
50
100
70
100
200
140
200
400
280
400
1.0
600
420
600
800
560
800
1000
700
1000
VOLTS
VOLTS
VOLTS
Amp
I
FSM
V
F
I
R
C
J
R
θ
JA
T
J
,
T
STG
25.0
1.1
10.0
50.0
4
180
-55 to +150
Amps
Volts
µ
A
pF
K/W
C
Note:
1.Averaged over any 20ms period.
2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
3.Thermal resistance from junction to ambient at 0.375” (9.5mm)lead length,P.C.B. mounted
MDD ELECTRONIC
CHENDA [ Chendahang Electronics Co., Ltd ]
