FM120 THRU FM1200
1.0A Surface Mount Schottky Barrier
Rectifiers - 20V-200V
Features
•
Batch process design, excellent power dissipation offers
SMA-F
better reverse leakage current and thermal resistance.
Low profile surface mounted application in order to
optimize board space.
Low power loss, high efficiency.
High current capability, low forward voltage drop.
High surge capability.
Guardring for overvoltage protection.
Ultra high-speed switching.
Silicon epitaxial planar chip, metal silicon junction.
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
Suffix "-H" indicates Halogen-free parts, ex. FM120-H.
•
•
•
•
•
•
•
•
•
0.196(4.9)
0.180(4.5)
0.012(0.3) Typ.
0.106(2.7)
0.091(2.3)
0.068(1.7)
0.060(1.5)
Mechanical data
•
Epoxy:UL94-V0 rated flame retardant
•
Case : Molded plastic, DO-214AC / SMA-F
•
Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026
0.032(0.8) Typ.
0.032 (0.8) Typ.
Dimensions in inches and (millimeters)
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
•
Weight : Approximated 0.05 gram
Maximum ratings and Electrical Characteristics
(AT
PARAMETER
Forward rectified current
Forward surge current
See Fig.1
CONDITIONS
T
A
=25
o
C unless otherwise noted)
SYMBOL
MIN.
TYP.
MAX.
1.0
30
0.5
10
UNIT
A
A
I
O
I
FSM
I
R
C
J
T
STG
-65
120
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
V
R
= V
RRM
T
J
= 25
O
C
V
R
= V
RRM
T
J
= 100 C
f=1MHz and applied 4V DC reverse voltage
O
Reverse current
Diode junction capacitance
Storage temperature
mA
pF
+175
O
C
SYMBOLS
FM120
FM130
FM140
FM150
FM160
FM180
FM1100
FM1150
FM1200
*1
V
RRM
(V)
20
30
40
50
60
80
100
150
200
V
RMS
*2
(V)
14
21
28
35
42
56
70
105
140
*3
V
R
(V)
20
30
40
50
60
80
100
150
200
*4
V
F
(V)
Operating
temperature
T
J
, (
O
C)
*1 Repetitive peak reverse voltage
-55 to +125
*2 RMS voltage
*3 Continuous reverse voltage
0.50
0.70
*4 Maximum forward voltage@I
F
=1.0A
0.85
0.90
0.92
-55 to +150
MDD ELECTRONIC
CHENDA [ Chendahang Electronics Co., Ltd ]
