SM5817 THRU SM5819
SURFACE MOUNT
SCHOTTKY BARRIER RECTI FI ERS
V O L T AG E R ANG E : 2 0 - - - 4 0 V CURRENT: 1.0 A
FEATURES
DO-213AA
Solderable Ends
D2
D1=
1.7
1.5
Metal-Semiconductor junction with guard ring
Epitaxial construction
Low forward voltage drop,low switching losses
High surge capability
For use in low voltage,high frequency inverters free
xxxx
wheeling,and polarity protection applications
The plastic material carries U/L recognition 94V-0
0.6
0.25
3.7
3.3
MECHANICAL DATA
D2 = D1
+0
-0.203
Dimensions in millimeters
Case: MiniMELF (DO-213AA), molded plastic body
Terminals: Solder plated, solderable per MIL-STD-750,
method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
MDD Catalog Number
LM5817
V
RRM
V
RMS
V
DC
I
F(AV)
20
14
20
LM5818
30
21
30
1.0
LM5819
40
28
40
UNITS
V
V
V
A
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
@T
A
=90
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
Maximum instantaneous forw ard voltage @ 1.0A
z
(Note 1)
@ 3.0A
Maximum reverse current
at rated DC blocking voltage
Typical junction capacitance
Typical thermal resistance
@T
A
=25
@T
A
=100
(Note2)
(Note3)
I
FSM
0.45
0.75
25
A
V
F
I
R
C
J
R
θ
JA
T
J
T
STG
0.55
0.875
0.5
10.0
110
75
- 55 ---- + 125
- 55 ---- + 150
0.60
0.90
V
mA
pF
/W
Operating junction temperature range
Storage temperature range
NOTE: 1. Pulse test : 300
s pulse width,1% duty cy cle.
2. Measured at 1.0MH
Z
and applied rev erse v oltage of 4.0V DC.
3.Thermal resistance junction to ambient,vertical
PC board mounting,0.5"(12.7mm)lead length.
MDD ELECTRONIC