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2N7002ESEPT 参数 Datasheet PDF下载

2N7002ESEPT图片预览
型号: 2N7002ESEPT
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型网络场效晶体管 [N-Channel Enhancement Mode Field Effect Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 2 页 / 448 K
品牌: CHENMKO [ CHENMKO ENTERPRISE CO. LTD. ]
 浏览型号2N7002ESEPT的Datasheet PDF文件第2页  
CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT
N-Channel Enhancement Mode Field Effect Transistor
VOLTAGE 60 Volts
CURRENT
500 mAmpere
APPLICATION
* Relay driver
* High speed line driver
* Logic level transistor
2N7002ESEPT
FEATURE
* Small surface mounting type. (SOT-23)
* High density cell design for low R
DS(ON)
.
* Suitable for high packing density.
* Rugged and reliable.
* High saturation current capability.
* ESD protect in input gate
1.5KV
(3)
SC-70/SOT-323
(2)
1.3±0.1
0.3±0.1
0.65
2.0±0.2
0.65
CONSTRUCTION
* N-Channel Enhancement with ESD protection in input
1.25±0.1
(1)
0.05~0.2
D
0.8~1.1
0~0.1
2.0~2.45
0.1Min.
CIRCUIT
1
G
3
S
2
T
A
= 25°C unless otherwise noted
Dimensions in millimeters
SC-70/SOT-323
Absolute Maximum Ratings
Symbol
Parameter
2N7002ESEPT
Units
V
DSS
Drain-Source Voltage
60
60
V
V
V
V
DGR
V
GSS
Drain-Gate Voltage (R
GS
< 1 M
)
Gate-Source Voltage - Continuous
- Non Repetitive (tp < 50µs)
±
20
±
40
500
800
400
-65 to 150
T
A
= 25°C
T
A
= 100°C
I
D
P
D
T
J
,T
STG
Maximum Drain Current - Continuous
- Pulsed
Maximum Power Dissipation
mA
mW
°C
Operating and Storage Temperature Range
Thermal characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
350
°C/W
2006-03