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2N7002ESPT 参数 Datasheet PDF下载

2N7002ESPT图片预览
型号: 2N7002ESPT
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型网络场效晶体管 [N-Channel Enhancement Mode Field Effect Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 5 页 / 515 K
品牌: CHENMKO [ CHENMKO ENTERPRISE CO. LTD. ]
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CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT
N-Channel Enhancement Mode Field Effect Transistor
VOLTAGE 60 Volts
CURRENT 0.300 Ampere
APPLICATION
* Relay driver
* High speed line driver
* Logic level transistor
2N7002ESPT
FEATURE
.041 (1.05)
.033 (0.85)
SOT-23
.019 (0.50)
(3)
* Rugged and reliable.
.110 (2.80)
.082 (2.10)
.119 (3.04)
(1)
.066 (1.70)
* High saturation current capability.
* ESD protect in input gate
1.5KV
(2)
CONSTRUCTION
* N-Channel Enhancement with ESD protection in input
MARKING
*
PK1
.055 (1.40)
.047 (1.20)
.103 (2.64)
.086 (2.20)
.028 (0.70)
.020 (0.50)
.007 (0.177)
.018 (0.30)
.002 (0.05)
* Small surface mounting type. (SOT-23)
* High density cell design for low R
DS(ON)
.
* Suitable for high packing density.
CIRCUIT
1
G
D
3
.045 (1.15)
.033 (0.85)
S
2
T
A
= 25°C unless otherwise noted
Dimensions in inches and (millimeters)
SOT-23
Absolute Maximum Ratings
Symbol
Parameter
2N7002ESPT
Units
V
DSS
Drain-Source Voltage
60
60
V
V
V
mA
mW
mW
°C
°C
V
DGR
V
GSS
Drain-Gate Voltage (R
GS
< 1 M
)
Gate-Source Voltage - Continuous
- Non Repetitive (tp < 50µs)
±
20
±
40
300
190
830
500
-65 to 150
300
T
A
= 25°C
T
A
= 100°C
T
A
= 25°C
T
A
=100°C
I
D
P
D
T
J
,T
STG
T
L
Maximum Drain Current - Continuous
- Pulsed
Maximum Power Dissipation
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering
Purposes, 1/16" from Case for 10 Seconds
Thermal characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
350
°C/W
2003-10