RATING CHARACTERISTIC CURVES ( 2SB1197KPT )
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
VALUE
500
UNIT
K/W
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise speciÞed.
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CEsat
C
c
f
T
PARAMETER
CONDITIONS
MIN.
-40
-32
-5
−
−
120
−
12
Typ
.
50
−
−
−
-500
-500
390
-500
30
200
Typ.
MAX.
V
V
V
nA
nA
UNIT
collector-base breakdown voltage I
E
= 0; I
C
=-50 uA
collector-emitter breakdown voltage I
B
= 0; I
C
=-1 mA
emitter-base breakdown voltage
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation
voltage
collector capacitance
transition frequency
I
C
= 0; I
E
=-50 uA
I
E
= 0; V
CB
= - 20 V
I
C
= 0; V
EB
= - 4 V
V
CE
= -3V; note 1
I
C
= -100 mA
I
C
= -500 mA, I
B
=-50 mA
0
I
E
= i
e
= 0; V
CB
=-10 V ; f = 1 MHz
I
C
= 10 mA; V
CE
= - 2 0 V ;
f = 100 MHz
mV
pF
MHz
Note
1. Pulse test: t
p
≤
300
µs; δ ≤
0.02.
2. hFE: Q Gade: 120~270
R Gade: 180~390
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