RATING CHARACTERISTIC CURVES ( 2SB1197KGP )
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
Note
PARAMETER
CONDITIONS
note 1
VALUE
UNIT
thermal resistance from junction to ambient
500
K/W
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb = 25 °C unless otherwise speciÞed.
SYMBOL PARAMETER
CONDITIONS
MIN.
-40
MAX.
UNIT
BVCBO
BVCEO
BVEBO
ICBO
collector-base breakdown voltage IE = 0; IC =-50 uA
collector-emitter breakdown voltage IB = 0; IC =-1 mA
emitter-base breakdown voltage IC = 0; IE =-50 uA
−
V
-32
-5
−
−
V
V
collector cut-off current
emitter cut-off current
DC current gain
IE = 0; VCB = - 20 V
IC = 0; VEB = - 4 V
VCE = -3V; note 1
−
-500
-500
390
nA
nA
IEBO
−
hFE
120
IC = -100 mA
VCEsat
collector-emitter saturation
voltage
IC = -500 mA, IB=-50 mA
−
-500
mV
Cc
fT
collector capacitance
transition frequency
IE = ie = 0; VCB =-10 V;f = 1 MHz
12Typ.
30
pF
IC = 10 mA; VCE = - 20 V ;
f = 100 MHz
50
200Typ.
MHz
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
2. hFE: Q Gade: 120~270
R Gade: 180~390
CHENMKO [ CHENMKO ENTERPRISE CO. LTD. ]
