CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT
PNP Silicon Power Transistor
VOLTAGE 12 Volts
CURRENT 3 Ampere
2SB717PT
FEATURE
* Small flat package. (SC-62/SOT-89)
* Peak pulse current : 10A
* Extremely low saturation voltage
* PC= 2.0 W
* Extremely low equivalent On-resistance
SC-62/SOT-89
CONSTRUCTION
* PNP Switching Transistor
4.6MAX.
1.7MAX.
1.6MAX.
0.4+0.05
2.5+0.1
+0.08
0.45-0.05
+0.08
0.40-0.05
1.50+0.1
+0.08
0.40-0.05
1.50+0.1
1
1 Base
2
3
CIRCUIT
2 Collector ( Heat Sink )
3 Emitter
0.8MIN.
4.6MAX.
1
B
2
C
3
E
Dimensions in millimeters
SC-62/SOT-89
MAXIMUM RATINGES
( At T
A
= 25 C unless otherwise noted )
RATINGS
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current DC
Peak Collector Current
Base Current
Total Power Dissipation
Storage Temperature
Junction Temperature
Operating Ambient Temperature
T
A
≤
25
O
C; Note 2
Note 1
CONDITION
Open Emitter
Open Base
Open Collector
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
TOT
T
STG
T
J
T
AMB
2SB717PT
-12
-12
-5
-3
-10
-0.5
2000
-55 to +150
-55 to +150
-55 to +150
UNITS
Volts
Volts
Volts
Amps
Amps
Amps
mW
o
o
C
C
C
o
o
Note
1. Measured under pulsed conditions. Pulse width=300uS. Duty cycle=2%
2. Maximum power dissipation is calculated assuming that the device is mounted on FR4 substrate measuring 40x40x0.6mm and
using comparable measurement methods adopted by other suppliers.
2007-04
CHENMKO [ CHENMKO ENTERPRISE CO. LTD. ]
