RATING CHARACTERISTIC CURVES ( CH3906ZPT )
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
Note
PARAMETER
CONDITIONS
note 1
VALUE
UNIT
thermal resistance from junction to ambient
500
K/W
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb = 25 °C unless otherwise speciÞed.
SYMBOL
ICBO
IEBO
hFE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
CONDITIONS
IE = 0; VCB = - 30 V
MIN.
MAX.
-50
UNIT
−
−
nA
nA
IC = 0; VEB = 6 V
VCE = -1V; note 1
-50
I
I
I
I
I
C = -0.1mA
60
80
−
C = -1mA
−
C = -10 mA
C = - 50 mA
C = -100 mA
100
60
30
−
300
−
−
VCEsat
collector-emitter saturation
voltage
IC = -10 mA; IB = - 1 mA
IC = -50 mA; IB = - 5 mA
-250
-400
-850
-950
4.5
10
mV
mV
mV
mV
pF
−
VBEsat
base-emitter saturation voltage IC = -10 mA; IB = -1mA
C = -50 mA; IB = - 5 mA
-650
I
−
−
−
Cc
Ce
collector capacitance
emitter capacitance
IE = ie = 0; VCB = - 5 V ;f = 1 MHz
pF
IC = ic = 0; VEB = -500 mV;
f = 1 MHz
fT
F
transition frequency
noise Þgure
IC = 10 mA; VCE = - 20 V ;
f = 100 MHz
250
−
MHz
dB
IC = 100 µA; VCE = - 5 V;RS = 1 kΩ; −
4
f = 10 Hz to 15.7 kHz
Switching times (between 10% and 90% levels);
ton
td
turn-on time
delay time
rise time
ICon = -10 mA; IBon = -1 mA;
IBoff = 1 mA
−
−
−
−
−
−
65
ns
ns
ns
ns
ns
ns
35
tr
35
toff
ts
turn-off time
storage time
fall time
300
225
75
tf
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
CHENMKO [ CHENMKO ENTERPRISE CO. LTD. ]
