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CHM2313QPT 参数 Datasheet PDF下载

CHM2313QPT图片预览
型号: CHM2313QPT
PDF下载: 下载PDF文件 查看货源
内容描述: P沟道增强型场效应晶体管 [P-Channel Enhancement Mode Field Effect Transistor]
分类和应用: 晶体晶体管场效应晶体管
文件页数/大小: 3 页 / 381 K
品牌: CHENMKO [ CHENMKO ENTERPRISE CO. LTD. ]
 浏览型号CHM2313QPT的Datasheet PDF文件第2页浏览型号CHM2313QPT的Datasheet PDF文件第3页  
CHENMKO ENTERPRISE CO.,LTD
CHM2313QPT
SURFACE MOUNT
P-Channel Enhancement Mode Field Effect Transistor
VOLTAGE 30 Volts
APPLICATION
* Servo motor control.
* Power MOSFET gate drivers.
* Other switching applications.
CURRENT 4.6 Ampere
FEATURE
* Small flat package. (SC-74/SOT-457)
* High density cell design for extremely low R
DS(ON)
.
* Rugged and reliable.
* High saturation current capability.
1.7~2.1
(1)
(6)
0.95
0.95
(3)
0.25~0.5
1.4~1.8
(4)
SC-74/SOT-457
2.7~3.1
CONSTRUCTION
* P-Channel Enhancement
0.08~0.2
0.3~0.6
4
0.935~1.3
0~0.15
2.6~3.0
CIRCUIT
6
D
D
S
1
D
D
G
3
Dimensions in millimeters
SC-74/SOT-457
Absolute Maximum Ratings
Symbol
Parameter
T
A
= 25°C unless otherwise noted
CHM2313QPT
Units
V
DSS
V
GSS
I
D
Drain-Source Voltage
Gate-Source Voltage
Maximum Drain Current - Continuous
- Pulsed
(Note 3)
-30
V
V
±
20
-4.6
A
-18.4
2000
-55 to 150
-55 to 150
mW
°C
°C
P
D
T
J
T
STG
Maximum Power Dissipation
Operating Temperature Range
Storage Temperature Range
Note : 1. Surface Mounted on FR4 Board , t <=10sec
2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2%
3. Repetitive Rating , Pulse width linited by maximum junction temperature
4. Guaranteed by design , not subject to production trsting
Thermal characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
(Note 1)
62.5
°C/W
2006-07