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CHM2362PT 参数 Datasheet PDF下载

CHM2362PT图片预览
型号: CHM2362PT
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型网络场效晶体管 [N-Channel Enhancement Mode Field Effect Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 3 页 / 331 K
品牌: CHENMKO [ CHENMKO ENTERPRISE CO. LTD. ]
 浏览型号CHM2362PT的Datasheet PDF文件第2页浏览型号CHM2362PT的Datasheet PDF文件第3页  
CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT
N-Channel Enhancement Mode Field Effect Transistor
VOLTAGE 60 Volts
APPLICATION
* Servo motor control.
* Power MOSFET gate drivers.
* Other switching applications.
CHM2362PT
CURRENT 3 Ampere
FEATURE
* Small flat package. (SC-59 )
* High density cell design for extremely low R
DS(ON)
.
* Rugged and reliable.
* High saturation current capability.
1.7~2.1
(2)
(3)
SC-59/SOT-346
0.95
2.7~3.1
0.95
(1)
CONSTRUCTION
* N-Channel Enhancement
0.3~0.51
1.2~1.9
0.89~1.3
0.085~0.2
0.3~0.6
2.1~2.95
(1)
G
CIRCUIT
D
(3)
0~0.1
S
(2)
Dimensions in millimeters
SC-59/SOT-346
Absolute Maximum Ratings
Symbol
Parameter
T
A
= 25°C unless otherwise noted
CHM2362PT
Units
V
DSS
V
GSS
Drain-Source Voltage
Gate-Source Voltage
Maximum Drain Current - Continuous
60
V
V
±
20
3.0
I
D
- Pulsed
P
D
T
J
T
STG
Maximum Power Dissipation
Operating Temperature Range
Storage Temperature Range
(Note 3)
A
12.0
1250
-55 to 150
-55 to 150
mW
°C
°C
Note : 1. Surface Mounted on FR4 Board , t <=10sec
2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2%
3. Repetitive Rating , Pulse width linited by maximum junction temperature
4. Guaranteed by design , not subject to production trsting
Thermal characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
(Note 1)
100
°C/W
2006-08