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CHM3055LAPAPT 参数 Datasheet PDF下载

CHM3055LAPAPT图片预览
型号: CHM3055LAPAPT
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道增强型网络场效晶体管 [N-Channel Enhancement Mode Field Effect Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 2 页 / 193 K
品牌: CHENMKO [ CHENMKO ENTERPRISE CO. LTD. ]
 浏览型号CHM3055LAPAPT的Datasheet PDF文件第2页  
CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT
N-Channel Enhancement Mode Field Effect Transistor
VOLTAGE 30 Volts
APPLICATION
* Servo motor control.
* Power MOSFET gate drivers.
* Other switching applications.
CHM3055LAPAPT
CURRENT 12 Ampere
FEATURE
* Small package. (TO-252A)
* Super high dense cell design for extremely low R
DS(ON)
.
* High power and current handing capability.
.280 (7.10)
.238 (6.05)
.220 (5.59)
.195 (4.95)
TO-252A
.094 (2.40)
.087 (2.20)
.035 (0.89)
.018 (0.45)
* N-Channel Enhancement
(1)
(3) (2)
.417 (10.6)
.346 (8.80)
CONSTRUCTION
.261 (6.63)
.213 (5.40)
.035 (0.90)
.025 (0.64)
.102 (2.59)
.078 (1.98)
1 Gate
.024 (0.61)
.016 (0.40)
CIRCUIT
(1)
G
D
(3)
2 Source
3 Drain( Heat Sink )
S
(2)
Dimensions in inches and (millimeters)
TO-252A
Absolute Maximum Ratings
Symbol
Parameter
T
A
= 25°C unless otherwise noted
CHM3055LAPAPT
Units
V
DSS
V
GSS
Drain-Source Voltage
Gate-Source Voltage
Maximum Drain Current - Continuous
30
V
V
±
20
12
I
D
- Pulsed
P
D
T
J
T
STG
(Note 3)
A
45
31
-55 to 150
-55 to 150
W
°C
°C
Maximum Power Dissipation at Tc = 25 °C
Operating Temperature Range
Storage Temperature Range
Note : 1. Surface Mounted on FR4 Board , t <=10sec
2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2%
3. Repetitive Rating , Pulse width linited by maximum junction temperature
4. Guaranteed by design , not subject to production trsting
Thermal characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
(Note 1)
50
°C/W
2006-02