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CHT2301PT 参数 Datasheet PDF下载

CHT2301PT图片预览
型号: CHT2301PT
PDF下载: 下载PDF文件 查看货源
内容描述: P沟道增强型场效应晶体管 [P-Channel Enhancement Mode Field Effect Transistor]
分类和应用: 晶体晶体管场效应晶体管
文件页数/大小: 3 页 / 215 K
品牌: CHENMKO [ CHENMKO ENTERPRISE CO. LTD. ]
 浏览型号CHT2301PT的Datasheet PDF文件第2页浏览型号CHT2301PT的Datasheet PDF文件第3页  
CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT
P-Channel Enhancement Mode Field Effect Transistor
VOLTAGE 20 Volts
APPLICATION
* Servo motor control.
* Power MOSFET gate drivers.
* Other switching applications.
CHT2301PT
CURRENT 2.3 Ampere
FEATURE
* Small surface mounting type. (SC-59/SOT-346)
* High density cell design for low R
DS(ON)
.
* Suitable for high packing density.
* Rugged and reliable.
* High saturation current capability.
* Voltage controlled small signal switch.
1.7~2.1
0.95
(1)
(2)
(3)
SC-59/SOT-346
0.95
2.7~3.1
0.3~0.51
CONSTRUCTION
* P-Channel Enhancement
1.2~1.9
MARKING
* 01
D
0.89~1.3
0.085~0.2
3
0.3~0.6
2.1~2.95
0~0.1
CIRCUIT
1
G
2
S
Dimensions in millimeters
SC-59/SOT-346
Absolute Maximum Ratings
Symbol
Parameter
T
A
= 25°C unless otherwise noted
CHT2301PT
Units
V
DSS
V
GSS
Drain-Source Voltage
Gate-Source Voltage
Maximum Drain Current - Continuous
(Note 1)
-20
V
V
±
8
-2.3
I
D
- Pulsed
I
S
P
D
T
J
,T
STG
Drain-Source Diose Forward Current
Maximum Power Dissipation
(Note 1)
(Note 2)
A
-10
-1.6
1250
-55 to 150
A
mW
°C
(Note 1)
Operating and Storage Temperature Range
Note : 1. Surface Mounted on FR4 Board , t <=10sec
2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2%
Thermal characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
85
°C/W
2005-12