FEATURES
. Silicon epitaxial planar diode
. Fast swithching diodes
. 500mW power dissipation
. The diode is also available in the Mini-MELF case with the type
designation LL4448
1N4448
SMALL SIGNAL SWITCHING DIODE
MECHANICAL DATA
.
Case:
MinMelf glass case(SOD- 80)
.
Weight:
Approx. 0.05gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Ratings at 25
ambient temperature unless otherwise specified)
Symbol
Reverse voltage
Peak reverse voltage
Average rectified current, Half wave rectification with
Resistive load at T
A
=25
and F 50Hz
I
FSM
Ptot
T
J
V
R
V
RM
I
AV
Value
75
100
150
1)
Units
Volts
Volts
mA
Surge forward current at t<1S and T
J
=25
Power dissipation at T
A
=25
Junction temperature
Storage temperature range
500
500
1)
175
-65 to + 175
mW
mW
T
STG
1)Valid provided that at a distance of 8mm from case are kept at ambient temperature(DO-35)
ELECTRICAL CHARACTERISTICS
(Ratings at 25
ambient temperature unless otherwise specified)
Symbols
Forward voltage
at I
F
=5mA
at IF=10mA
Leakage current
at V
R
=20V
at V
R
=75V
at V
R
=20V, T
J
=150
Junction capacitance at V
R
=V
F
=0V
Reverse breakdown voltage tested with 100 A puse
Reverse recovery time from IF=10mA to IR=1mA,
V
R
=6V, R
L
=100
Thermal resistance junction to ambient
Rectification efficience at f=100MHz,V
RF
=2V
R
JA
Min.
0.62
Typ.
Max.
0.72
1
25
5
50
4
Units
V
V
nA
A
A
pF
V
V
F
V
F
I
R
I
R
I
R
C
J
V
(BR)R
t
rr
100
4
ns
350
1)
350
1)
0.45
1)Valid provided that leads at a distance of 8mm from case are kept at ambient temperature(DO-35)
Copyright @ 2000 SHANGHAI CHENYI ELECTRONICS CO.,LTD
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