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Technology Co.,Ltd
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BAT86
SMALL SIGNAL
SCHOTTKY
DIODES
Features
·
·
·
·
For general purpose applications
These diodes features very low turn-on voltage and fast switching.
These devices are protected by a PN junction guard ring against
excessive voltage,such as electrostatic discharges.
These diode is also available in the Mini-MELF case with type
designation LL86
Metal-on-silicon Schottky barrier device which is protected by a PN
junction guard ring. The low forward voltage drop and fast switching
make it ideal for protection of MOS devices,and low logic applications.
MECHANICAL DATA
·
·
·
Case: Do-35 glass case
Polarity: Color band denotes cathode end
Weight: Approx. 0.13 gram
ABSOLUTE RATINGS(LIMITING VALUES)
Symbols
Repetitive Peak Reverse Voltage
Forward Continuous Current at T =25
0
C
Repetitive Peak Forward Current at t<1s,ä< 0.5,T
A
=25 C
0
Value
50
2001)
3001)
Units
V
mA
mA
V
R
I
F
I
FRM
Power Dissipation
at T
A
=65
0
C
Ptot
T
J
T
A
T
STG
2001)
125
-55~+125
-55~+150
0
0
0
mW
C
C
C
Junction temperature
Ambient Operating temperature Range
Storage Temperature Range
Dimensions in inches and (millimeters)
1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature
ELECTRICAL CHARACTERISTICS
Reverse breakdown voltage Tested with
10
µ
A pulses
Forward voltage
Pulse Test t
p
300
µ
s,
δ
2%
at I
F
=0.1mA,
at I
F
=1mA,
at I
F
=10mA,
at I
F
=30mA,
at I
F
=100mA
Leakage current V
R
=25V
Junction Capacitance at V
R
=1V ,f=1MHz
Reverse recovery time Form I
F
=10mA,I
R
=10mA,I
R
=1mA
Thermal resistance junction to ambient Air
V
(BR)R
V
F
V
F
V
F
V
F
V
F
I
R
C
J
trr
R
θ
JA
50
V
0.200
0.272
0.365
0.460
0.700
0.2
0.300
0.380
0.450
0.600
0.900
0.5
8
5
300
V
V
V
V
V
µA
pF
ns
K/W
1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature(DO-35)
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