Shanghai Lunsure Electronic
Technology Co.,Ltd
Technology Co.,Ltd
Fax:0086-21-57152769
LLSD103A
THRU
LLSD103C
Schottky Barrier
Switching Diode
Features
l
l
l
Low Reverse Recovery Time
Low Reverse Capacitance
Low Forward Voltage Drop
l
Guard Ring Construction for Transient Protection
Mechanical Data
l
Case: MiniMELF, Glass
l
Terminals: Solderable per MIL-STD-202, Method 208
l
Polarity: Indicated by Cathode Band
l
Weight: 0.05 grams ( approx.)
MINIMELF
Maximum Ratings @ 25
o
C Unless Otherwise Specified
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current(Note1)
Maximum Single cycle surge 60Hz
sine wave
Power Dissipation(Note 1)
Thermal Resistance(Note 1)
Operation/Storage Temp. Range
Symbol LLSD103A LLSD103B LLSD103C
V
RRM
V
RWM
V
R
V
R(RMS)
I
FM
I
FSM
P
d
R
Tj, T
STG
28V
21V
350mA
15A
DIMENSION
400mW
250K/W
-55 to 150 C
o
Cathode Mark
C
40V
30V
20V
B
14V
A
DIM
A
B
C
INCHES
MIN
.134
.008
.055
MAX
.142
.016
.059
MIN
3.40
0.20
1.40
MM
MAX
3.60
0.40
1.50
NOTE
Electrical Characteristics @ 25
o
C Unless Otherwise Specified
Charateristic
Peak
Reverse
Current
LLSD103A
LLSD103B
LLSD103C
V
F M
-----
-----
0.37V
0.60V
Symbol Min
Typ
Max
Test Cond.
V
R
=30V
SUGGESTED SOLDER
PAD LAYOUT
0.105
I
RM
-----
-----
5.0uA
V
R
=20V
V
R
=10V
I
F
=20mA
I
F
=200mA
V
R
=0V, f=1.0MHz
I
F
=I
R
=50mA to 200mA,
recover to 0.1 I
R
0.030”
0.075”
Maximum Forward
Voltage Drop
Junction Capacitance
Reverse Recovery Time
Cj
t
rr
-----
-----
50
10
pF
ns
Note
: 1. Valid provided that electrodes are kept at ambient temperature
www.cnelectr.com
CHENYI [ SHANGHAI LUNSURE ELECTRONIC TECH ]
