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R2000F 参数 Datasheet PDF下载

R2000F图片预览
型号: R2000F
PDF下载: 下载PDF文件 查看货源
内容描述: 500Milliamp高压快恢复整流硅1200至2000年伏 [500Milliamp High voltage fast recovery silicon rectifier 1200 to 2000 volts]
分类和应用: 高压
文件页数/大小: 2 页 / 36 K
品牌: CHENYI [ SHANGHAI LUNSURE ELECTRONIC TECH ]
 浏览型号R2000F的Datasheet PDF文件第2页  
Shanghai Lunsure Electronic
Technology Co.,Ltd
Tel:0086-21-37185008
Fax:0086-21-57152769
R1200F
THRU
R2000F
500 Milliamp High
Voltage Fast Recovery
Features
Low Cost
Low Leakage
Low Forward Voltage Drop
High Current Capability
High Voltage
Fast Switching For Higher Efficiency
Silicon Rectifier
1200 to 2000 Volts
DO-41
Maximum Ratings
Operating Temperature: -55°C to +150°C
Storage Temperature: -55°C to +150°C
Catalog
Number
R1200F
R1500F
R1800F
R2000F
Device
Marking
---
---
---
---
Maximum
Recurrent
Peak Reverse
Voltage
1200V
1500V
1800V
2000V
Maximum
RMS
Voltage
840V
1050V
1260V
1400V
Maximum
DC
Blocking
Voltage
1200V
1500V
1800V
2000V
D
A
Cathode
Mark
B
D
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
Current
Peak Forward Surge
Current
Maximum
Instantaneous
Forward Voltage
R1200F-R1800F
R2000F
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
Typical Junction
Capacitance
Maximum Reverse
Recovery Time
I
F(AV)
I
FSM
500mA
30A
T
A
= 50°C
8.3ms, half sine
DIMENSIONS
INCHES
MIN
.166
.080
.028
1.000
MM
MIN
4.10
2.00
.70
25.40
C
V
F
2.4V
4.0V
5.0µA
50µA
30pF
500nS
I
FM
= 0.5A;
T
A
= 50°C
T
A
= 25°C
T
A
= 100°C
Measured at
1.0MHz, V
R
=4.0V
DIM
A
B
C
D
MAX
.205
.107
.034
---
MAX
5.20
2.70
.90
---
NOTE
I
R
C
J
T
rr
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