Shanghai Lunsure Electronic
Technology Co.,Ltd
Tel:0086-21-37185008
Fax:0086-21-57152769
R1200F
THRU
R2000F
500 Milliamp High
Voltage Fast Recovery
Features
•
•
•
•
•
•
Low Cost
Low Leakage
Low Forward Voltage Drop
High Current Capability
High Voltage
Fast Switching For Higher Efficiency
Silicon Rectifier
1200 to 2000 Volts
DO-41
Maximum Ratings
•
•
Operating Temperature: -55°C to +150°C
Storage Temperature: -55°C to +150°C
Catalog
Number
R1200F
R1500F
R1800F
R2000F
Device
Marking
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---
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Maximum
Recurrent
Peak Reverse
Voltage
1200V
1500V
1800V
2000V
Maximum
RMS
Voltage
840V
1050V
1260V
1400V
Maximum
DC
Blocking
Voltage
1200V
1500V
1800V
2000V
D
A
Cathode
Mark
B
D
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
Current
Peak Forward Surge
Current
Maximum
Instantaneous
Forward Voltage
R1200F-R1800F
R2000F
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
Typical Junction
Capacitance
Maximum Reverse
Recovery Time
I
F(AV)
I
FSM
500mA
30A
T
A
= 50°C
8.3ms, half sine
DIMENSIONS
INCHES
MIN
.166
.080
.028
1.000
MM
MIN
4.10
2.00
.70
25.40
C
V
F
2.4V
4.0V
5.0µA
50µA
30pF
500nS
I
FM
= 0.5A;
T
A
= 50°C
T
A
= 25°C
T
A
= 100°C
Measured at
1.0MHz, V
R
=4.0V
DIM
A
B
C
D
MAX
.205
.107
.034
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MAX
5.20
2.70
.90
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NOTE
I
R
C
J
T
rr
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