Shanghai Lunsure Electronic
Technology Co.,Ltd
Tel:0086-21-37185008
Fax:0086-21-57152769
TSMBJ0305C-072
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Features
Oxide-Glass passivated Junction
Bi-Directional protection in a single device
Surge capabilities up to 50A@10/1000us or 150A@8/20us
High Off-State impedance and Low On-State voltage
Plastic material has UL flammability classification 94V -0
Transient Voltage
Protection Device
65 Volts
DO-214AA
(SMBJ)
H
Mechanical Data
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Case : Molded plastic
Polarity : None cathode band denotes
Approx Weight : 0.093grams
J
Maximum Ratings
Characteristic
Non-repetitive peak
impulse current
Non-repetitive peak
On-state current
Operating temperature
range
Junction and storage
temperature range
Symbol
I
PP
I
TSM
T
OP
T
J
, T
STG
Value
50A
20A
-40~125
o
C
-55~150 C
o
DIM
A
B
C
D
E
F
G
H
J
Unit
10/1000us
8.3ms, one-half
cycle
E
F
G
DIMENSIONS
INCHES
MIN
.078
.077
.002
---
.030
.065
.205
.160
.130
MM
MIN
2.00
1.96
.05
---
.76
1.65
5.21
4.06
3.30
A
C
D
B
Thermal Resistance
Characteristic
Thermal Resistance
junction to lead
Thermal Resistance
junction to ambient
Typical positive
temperature
coefficient for
breakdown voltage
Symbol
R
q
JL
R
q
JA
MAX
.096
.083
.008
.02
.060
.091
.220
.180
.155
MAX
2.44
2.10
.20
.51
1.52
2.32
5.59
4.57
3.94
NOTE
Value
30 C/W
120
o
C/W
0.1%/ C
o
o
Unit
On recommended
pad layout
SUGGESTED SOLDER
PAD LAYOUT
0.090"
0.085”
△
V
BR
/
△
T
J
0.070”
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