CS3865C
Electrical Characteristics:
V
CC
= 15V, R
T
= 8.2kΩ, C
T
= 3.3nF, for typical values T
A
=25˚C, for min/max values T
A
is the operating
ambient temperature range that applies [Note 3].
TEST CONDITIONS
MIN
PARAMETER
TYP
MAX
UNIT
s
Current Sense Section
Current Sense Input
Voltage Gain
Maximum Current Sense
Input Threshold
Input Bias Current
Propagation Delay
s
Output 2 Enable Pin
Enable Pin Voltage
High State
Low State
Low State Input Current
s
Drive Outputs
Output Voltage
Low State
High State
Output Voltage with
UVLO Activated
Output Voltage Rise Time
Output Voltage Fall Time
I
SINK
=20mA
I
SINK
=200mA
I
SOURCE
=20mA
I
SOURCE
=200mA
V
CC
=6.0V, I
SINK
=1.0mA
C
L
=1.0nF (Note 6)
C
L
=1.0nF (Note 6)
0.1
1.6
13.5
13.4
0.1
28
25
0.4
2.5
V
V
V
V
V
ns
ns
Output 2 enabled
Output 2 disabled
V
IL
= 0V
3.5
0.0
100
250
V
REF
1.5
400
V
V
µA
Current Sense Input to Output (Note 6)
(Notes 4 and 5)
(Note 4)
2.75
430
3.00
480
-2.0
150
3.25
530
-10.0
300
V/V
mV
µA
ns
13.0
12.0
1.1
150
150
s
Undervoltage Lockout Section
Start-Up Threshold
Minimum Operating Voltage
After Turn-On
Hysteresis
s
Total Device
Start-Up Current
Operating Current
V
CC
=12V
(Note 7)
15.5
0.6
20
17.0
1.0
25
19.0
mA
mA
V
CS3865C
13
9.0
14
10.0
4
15
11.0
V
V
V
Power Supply Zener Voltage I
CC
=30mA
Note 1: Maximum package power dissipation limits must be observed.
Note 3: Adjust V
CC
above the Start-Up threshold before setting to 15V.
Note 4: This parameter is measured at latch trip point with V
FB
=0V.
Note 5: Comparator gain is defined as:
∆V
Compensation
AV =
∆V
Current Sense
Note 6: These parameters are guaranteed by design but not 100% tested
in production.
Note 7: Low duty cycle pulse techniques are used during test to main-
tain junction temperature as close to ambient as possible: T
low
=0°C ;
T
high
=+70°C
3
CHERRY [ CHERRY SEMICONDUCTOR CORPORATION ]
