PA04 • PA04A
ABSOLUTE MAXIMUM RATINGS
SUPPLY VOLTAGE, +V
S
to –V
S
BOOST VOLTAGE
OUTPUT CURRENT, within SOA
POWER DISSIPATION, internal
INPUT VOLTAGE, differential
INPUT VOLTAGE, common mode
TEMPERATURE, pin solder - 10s
TEMPERATURE, junction
2
TEMPERATURE, storage
OPERATING TEMPERATURE RANGE, case
PA04
TEST CONDITIONS
1
ABSOLUTE MAXIMUM RATINGS
SPECIFICATIONS
200V
SUPPLY VOLTAGE +20V
20A
200W
±20V
±V
S
300°C
150°C
–65 to +150°C
–55 to +125°C
PA04A
MAX
MIN
TYP
MAX
UNITS
SPECIFICATIONS
PARAMETER
INPUT
OFFSET VOLTAGE, initial
OFFSET VOLTAGE, vs. temperature
OFFSET VOLTAGE, vs. supply
OFFSET VOLTAGE, vs. power
BIAS CURRENT, initial
BIAS CURRENT, vs. supply
OFFSET CURRENT, initial
INPUT IMPEDANCE, DC
INPUT CAPACITANCE
COMMON MODE VOLTAGE RANGE
COMMON MODE REJECTION, DC
INPUT NOISE
GAIN
OPEN LOOP, @ 15Hz
GAIN BANDWIDTH PRODUCT
POWER BANDWIDTH
PHASE MARGIN
OUTPUT
VOLTAGE SWING
VOLTAGE SWING
CURRENT, peak
SETTLING TIME to .1%
SLEW RATE
CAPACITIVE LOAD
RESISTANCE
POWER SUPPLY
VOLTAGE
Full temperature range
CURRENT, quiescent, boost supply
CURRENT, quiescent, total
CURRENT, quiescent, total, sleep mode Full temperature range
THERMAL
RESISTANCE, AC, junction to case
3
RESISTANCE, DC, junction to case
RESISTANCE
4
, junction to air
TEMPERATURE RANGE, case
NOTES:
*
1.
2.
3.
4.
Full temperature range, F>60Hz
Full temperature range, F<60Hz
Full temperature range
Meets full range specification
±15
I
O
= 15A
V
BOOST
= Vs + 5V, I
O
= 20A
A
V
= 1, 10V step, R
L
= 4Ω
A
V
= 10, C
C
= 100pF, R
C
= 120Ω
Full temperature range, A
V
= +1
Full temperature range, C
C
= 100pF
I
O
= 10A
R
L
= 4.5Ω, V
O
= 180V p-p
C
C
= 100pF, R
C
= 120Ω
Full temperature range
94
Full temperature range
Full temperature range
MIN
TYP
Full temperature range
Full temp. range, V
CM
=
±20V
100kHz BW, R
S
= 1KΩ
±V
B
-8
86
5
30
15
30
10
.01
10
10
11
13
98
10
102
2
90
60
10
50
50
50
*
*
2
10
*
10
5
*
5
*
*
*
*
*
*
*
*
5
30
20
20
mV
µV/°C
µV/V
µV/W
pA
pA/V
pA
Ω
pF
V
dB
µVrms
dB
MHz
kHz
°
*
±V
S
-8.8
±V
S
-7.5
±V
S
-6.8
±V
S
-5.5
20
2.5
40
50
10
2
*
*
*
*
*
*
*
*
*
V
V
A
µs
V/µs
nF
Ω
±75
30
70
3
.3
.5
12
±100
40
90
5
.4
.6
85
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
V
mA
mA
mA
°C/W
°C/W
°C/W
°C
–25
*
The specification of PA04A is identical to the specification for PA04 in applicable column to the left.
Unless otherwise noted: T
C
= 25°C, C
C
= 470pF, R
C
= 120 ohms. DC input specifications are
±
value given. Power supply
voltage is typical rating.
±V
BOOST
=
±V
S
.
Long term operation at the maximum junction temperature will result in reduced product life. Derate internal power dissipation
to achieve high MTTF. For guidance, refer to the heatsink data sheet.
Rating applies if the output current alternates between both output transistors at a rate faster than 60 Hz.
The PA04 must be used with a heatsink or the quiescent power may drive the unit to junction temperatures higher than 150°C.
The PA04 is constructed from MOSFET transistors. ESD handling procedures must be observed.
The internal substrate contains beryllia (BeO). Do not break the seal. If accidentally broken, do not crush, machine, or
subject to temperatures in excess of 850°C to avoid generating toxic fumes.
CAUTION
APEX MICROTECHNOLOGY CORPORATION
• 5980 NORTH SHANNON ROAD • TUCSON, ARIZONA 85741 • USA • APPLICATIONS HOTLINE: 1 (800) 546-2739
CIRRUS [ CIRRUS LOGIC ]
