PA90
EXTERNAL CONNECTIONS
1
2
3
Rc
–IN
+IN
4
5
Cc
R
CL
6
7
8
9
10
11
12
P r o d u c t I n n o v a t i o nF r o m
*
I
Q
TO LOAD
AND FEEDBACK
–Vs
+Vs
*
(See text.)
* Bypassing required.
Formed leads available
See package EE
12-pin SIP
PACKAgE
STYLE DP
1. CHARACTERISTICS ANd SPECIfICATIoNS
AbSoLUTE MAXIMUM RATINgS
Parameter
SUPPLY VOLTAGE, +V
S
to -V
S
OUTPUT CURRENT, source, sink, peak, within SOA
POWER DISSIPATION, continuous @ T
C
= 25°C
INPUT VOLTAGE, differential
INPUT VOLTAGE, common mode
TEMPERATURE, pin solder, 10s max.
TEMPERATURE, junction (Note 2)
TEMPERATURE RANGE, storage
OPERATING TEMPERATURE RANGE, case
−40
−25
-20
-V
S
Symbol
Min
Max
400
350
30
20
V
S
260
150
85
85
Units
V
mA
W
V
V
°C
°C
°C
°C
CAUTION
The PA90 is constructed from MOSFET transistors. ESD handling procedures must be observed.
The exposed substrate contains beryllia (BeO). Do not crush, machine, or subject to temperatures
in excess of 850°C to avoid generating toxic fumes.
SPECIFICATIONS
Parameter
AMPLIfIER INPUT
OFFSET VOLTAGE, initial
OFFSET VOLTAGE vs. temperature
OFFSET VOLTAGE vs. supply
OFFSET VOLTAGE vs. time
BIAS CURRENT, initial
BIAS CURRENT vs. supply
OFFSET CURRENT, initial
INPUT IMPEDANCE, DC
INPUT CAPACITANCE
COMMON MODE VOLTAGE RANGE
(Note 3)
COMMON MODE REJECTION, DC
NOISE
V
CM
= ±90V
100KHz bandwidth, R
S
= 1KΩ,
C
C
= OPEN
±V
S
Ŧ 15
80
98
1
Full temperature range
0.5
15
10
75
200
4
50
10
11
4
500
2000
2
50
25
mV
µV/°C
µV/V
µV/kHz
pA
pA/V
pA
Ω
pF
V
dB
µV RMS
Test Conditions
1
Min
Typ
Max
Units
2
PA90U
CIRRUS [ CIRRUS LOGIC ]
