C30L100CT
Chip Integration Technology Corporation
30A Trench Schottky Rectifier
Main Product Characteristics
■Outline
Dimensions in inches(millimeters)
TO-220AB
K
symbol
Min
Max
IF(AV)
VRRM
TJ
2 X 15A
100V
L
ØP
A
A
B
0.398(10.1)
0.236(6.0)
0.579(14.7)
0.543(13.8)
0.143(3.63)
0.104(2.64)
0.335(8.5)
0.046(1.17)
0.028(0.71)
0.098(2.49)
0.176(4.47)
0.046(1.17)
0.102(2.6)
0.019(0.28)
0.147(3.74)
0.406(10.3)
0.252(6.4)
0.594(15.1)
0.551(14.0)
0.159(4.03)
0.112(2.84)
0.350(8.9)
0.054(1.37)
0.036(0.91)
0.102(2.59)
0.184(4.67)
0.054(1.37)
0.110(2.8)
0.021(0.48)
0.155(3.94)
F
C
D
E
B
C
150OC
Marking code
F
VF(Typ)
0.64V
G
G
H
I
1
2
3
C
M
H
E
J
■ Features
I
K
D
L
M
N
ØP
• Low forward voltage drop.
• Excellent high temperature stability.
• Fast switching capability.
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
J
N
Alternate
Dimensions in inches(millimeters)
K
symbol
Min
0.394(10.0)
0.228(5.8)
Max
0.413(10.5)
0.268(6.8)
L
ØP
A
A
B
F
C
D
E
0.570(14.48) 0.625(15.87)
0.519(13.18) 0.558(14.18)
B
C
0.089(3.5)
0.100(2.54)
0.330(8.38)
0.045(1.15)
0.029(0.75)
0.095(2.42)
0.160(4.07)
0.045(1.15)
0.080(2.04)
0.013(0.33)
0.148(3.75)
0.099(3.9)
0.120(3.04)
0.350(8.9)
0.060(1.52)
0.037(0.95)
0.105(2.66)
0.190(4.82)
0.055(1.39)
0.110(2.8)
■ Mechanical Data
Marking code
F
G
G
H
I
1
2
3
• Epoxy : UL94-V0 rated flame retardant.
• Case : JEDEC TO-220AB molded plastic body .
• Terminals : Solder plated, solderable per
MIL-STD-750, Method 202. 6
M
H
E
J
I
K
D
L
M
N
ØP
0.019(0.52)
0.156(3.95)
• Polarity: As marked.
J
N
• Weight : Approximated 2.25 gram.
Dimensions in inches and (millimeters)
■ Circuit Diagram
■ Maximum Ratings
Rating at 25OC ambient temperature unless otherwise specified.
Parameter
Condition
Symbol
VRWM
IO
UNIT
V
C30L100CT
Working peak reverse voltage
Forward Rectified Current (total device)
100
30
A
A
8.3ms single half sine-wave
superimposed on rate load (JEDEC method)
Forward Surge Current (per diode)
IFSM
250
Pulse width 2us, 1000Hz, square wave
IRRM
(per diode)
Peak Repetitive Reverse Surge Current
3
A
at TA 25oC,10 cycles
RθJC
RθJA
TSTG
TJ
Junction to case
2
OC/W
Thermal Resistance (per diode)
Junction to ambient
50
OC
OC
Storage Temperature
-55 ~ +150
-55 ~ +150
Operating Junction Temperature
■ Electrical Characteristics
Rating at 25OC ambient temperature unless otherwise specified.
Parameter
Condition
IF = 3A, TJ = 25OC
Symbol
VF
MIN.
TYP.
MAX.
UNIT
mV
450
I = 15A, TJ = 25OC
760
Forward Voltage Drop (per diode)
670
640
0.01
10
F
I = 15A, TJ = 125OC
F
VR = 100V , TJ = 25OC
VR = 100V , TJ = 125OC
IR = 0.1mA, TJ = 25OC
0.1
IR
Reverse Current (per diode)
mA
V
40
VBR
100
Reverse Breakdown Voltage (per diode)
Document ID : DS-11KE8
Revised Date : 2017/04/10
Revision : C8
1
CITC [ Chip Integration Technology Corporation ]
