CF10U60CT
Chip Integration Technology Corporation
10A Trench Schottky Rectifier
Main Product Characteristics
■Outline
ITO-220AB
K
L
IF(AV)
VRRM
TJ
2 X 5A
60V
Dimensions in inches(millimeters)
symbol
A
ØP
Min
Max
A
B
0.390(9.9)
0.268(6.8)
0.583(14.8)
0.512(13.0)
0.102(2.6)
0.101(2.55)
0.043(1.1)
0.043(1.1)
0.020(0.5)
0.098(2.49)
0.169(4.3)
0.112(2.85)
0.098(2.5)
0.020(0.5)
0.130(3.3)
0.408(10.36)
0.283(7.2)
0.598(15.2)
0.543(13.8)
0.150(3.8)
0.112(2.85)
0.053(1.35)
0.053(1.35)
0.028(0.7)
0.102(2.59)
0.185(4.7)
0.128(3.25)
0.114(2.9)
0.028(0.7)
0.134(3.5)
F
175OC
B
C
D
E
C
D
VF(Typ)
0.42V
Marking code
F
G
H
I
M
G
E
■ Features
H
J
K
• Low forward voltage drop.
• Excellent high temperature stability.
• Fast switching capability.
I
L
M
N
ØP
J
N
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
Alternate
K
L
Dimensions in inches(millimeters)
symbol
A
ØP
Min
Max
A
B
0.383(9.72) 0.404(10.27)
F
0.248(6.3)
0.571(14.5)
0.516(13.1)
-
0.272(6.9)
0.610(15.5)
0.547(13.9)
0.161(4.1)
0.126(3.2)
0.051(1.3)
0.051(1.3)
0.035(0.9)
0.105(2.67)
0.189(4.8)
0.122(3.1)
0.117(2.96)
0.031(0.8)
0.142(3.6)
B
C
D
E
■ Mechanical Data
C
D
Marking code
F
0.094(2.4)
0.039(1.0)
0.039(1.0)
0.020(0.5)
0.095(2.41)
0.169(4.3)
0.055(1.4)
0.091(2.3)
0.014(0.35)
0.122(3.1)
• Epoxy : UL94-V0 rated flame retardant.
• Case : JEDEC ITO-220AB molded plastic body.
• Terminals : Solder plated, solderable per
MIL-STD-750, Method 202. 6
• Polarity: As marked.
• Weight : Approximated 2.25 gram.
G
H
I
M
G
E
H
J
K
I
L
M
N
ØP
J
N
Dimensions in inches and (millimeters)
■ Circuit Diagram
■ Maximum Ratings
Rating at 25OC ambient temperature unless otherwise specified.
Parameter
Condition
Symbol
UNIT
V
CF10U60CT
VDC
60
Maximum DC Blocking Voltage
Forward Rectified Current (total device)
IO
10
A
A
8.3ms single half sine-wave
superimposed on rate load (JEDEC method)
Forward Surge Current (per diode)
IFSM
140
Pulse width 2us, 1000Hz, square wave
IRRM
(per diode)
Peak Repetitive Reverse Surge Current
2
A
at TA 25oC,10 cycles
RθJC
RθJA
TSTG
TJ
Junction to case
8
OC/W
Thermal Resistance (per diode)
Junction to ambient
50
OC
OC
Storage Temperature
-55 ~ +175
-55 ~ +175
Operating Junction Temperature
■ Electrical Characteristics
Rating at 25OC ambient temperature unless otherwise specified.
Parameter
Condition
IF = 3A, TJ = 25OC
Symbol
VF
MIN.
TYP.
MAX.
UNIT
mV
440
I = 5A, TJ = 25 OC
540
Forward Voltage Drop (per diode)
485
420
0.004
4
F
I = 5A, TJ = 125 OC
F
VR = VRWM , TJ = 25OC
VR = VRWM , TJ = 125OC
IR = 0.1mA, TJ = 25OC
0.05
IR
Reverse Current (per diode)
mA
V
20
VBR
60
Reverse Breakdown Voltage (per diode)
Document ID : DS-11K013
Revised Date : 2016/07/28
Revision : C
1
CITC [ Chip Integration Technology Corporation ]
