CS20L40CT-A / CS20L45CT-A
Super Low Barrier High Voltage Power Rectifier
Chip Integration Technology Corporation
Main Product Characteristics
■ Outline
IF(AV)
VRRM
TJ
2x10A
Dimensions in inches(millimeters)
TO-220AB
K
symbol
Min
Max
L
ØP
40V/45V
150OC
A
A
B
0.398(10.1)
0.236(6.0)
0.579(14.7)
0.543(13.8)
0.143(3.63)
0.104(2.64)
0.335(8.5)
0.046(1.17)
0.028(0.71)
0.098(2.49)
0.176(4.47)
0.046(1.17)
0.102(2.6)
0.019(0.28)
0.147(3.74)
0.406(10.3)
0.252(6.4)
0.594(15.1)
0.551(14.0)
0.159(4.03)
0.112(2.84)
0.350(8.9)
0.054(1.37)
0.036(0.91)
0.102(2.59)
0.184(4.67)
0.054(1.37)
0.110(2.8)
0.021(0.48)
0.155(3.94)
F
C
D
E
B
C
0.42V
V(Typ)
Marking code
F
G
G
H
I
1
2
3
C
M
H
E
J
■ Features
I
K
D
L
M
N
ØP
• Low forward voltage drop.
• Excellent high temperature stability.
• Fast switching capability.
J
N
Alternate
Dimensions in inches(millimeters)
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
K
symbol
Min
0.394(10.0)
0.228(5.8)
Max
0.413(10.5)
0.268(6.8)
L
ØP
A
A
B
F
C
D
E
0.570(14.48) 0.625(15.87)
0.519(13.18) 0.558(14.18)
B
C
■ Mechanical data
0.089(3.5)
0.100(2.54)
0.330(8.38)
0.045(1.15)
0.029(0.75)
0.095(2.42)
0.160(4.07)
0.045(1.15)
0.080(2.04)
0.013(0.33)
0.148(3.75)
0.099(3.9)
0.120(3.04)
0.350(8.9)
0.060(1.52)
0.037(0.95)
0.105(2.66)
0.190(4.82)
0.055(1.39)
0.110(2.8)
Marking code
F
G
• Epoxy : UL94-V0 rated flame retardant.
• Case : JEDEC TO-220AB molded plastic body.
• Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026.
• Polarity: As marked.
• Mounting Position : Any.
G
H
I
1
2
3
M
H
E
J
I
K
D
L
M
N
ØP
0.019(0.52)
0.156(3.95)
J
N
PIN 2
• Weight : Approximated 2.25 gram.
PIN 1
PIN 3
■ Maximum ratings and electrical characteristics
Dimensions in inches and (millimeters)
Rating at 25OC ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Parameter
Marking code
Conditions
Symbol CS20L40CT-A CS20L45CT-A
CS20L40CT CS20L45CT
VRRM
UNIT
V
Peak repetitive reverse voltage
Working peak reverse voltage
DC blocking voltage
VRWM
VRM
IO
40
45
Forward rectified current (total device)
20
A
A
8.3ms single half sine-wave superimposed on
rate load (JEDEC method)
Forward surge current (per diode)
IFSM
250
Peak repetitive reverse surge current
(per diode)
IRRM
2us - 1kHz
3
A
OC/W
OC
RθJC
Thermal resistance(1)
Junction to case
2
Operating and Storage temperature
TJ, TSTG
-55 ~ +150
Parameter
Conditions
IF = 10A, TJ = 25OC
IF = 10A, TJ = 125OC
IF = 20A, TJ = 25OC
VR = VRRM TJ = 25OC
VR = VRRM TJ = 125OC
Symbol
VF
MIN.
TYP.
420
MAX.
500
470
600
0.5
UNIT
mV
Forward voltage drop (per diode)
IR
Reverse current (per diode)
mA
100
Note : 1.Thermal resistance from junction to case per leg, with heatsink size(1.35" x 0.95" x 0.18") Al-plate.
Document ID : DS-11KBC
Revised Date : 2015/08/10
Revision : C8
1
CITC [ Chip Integration Technology Corporation ]
