CSF10S45CT-A
10A MOS Schottky Rectifier
Chip Integration Technology Corporation
Main Product Characteristics
■ Outline
IF(AV)
VRRM
TJ
2x5A
K
L
ITO-220AB
Dimensions in inches(millimeters)
symbol
A
45V
ØP
Min
Max
A
B
0.390(9.9)
0.268(6.8)
0.583(14.8)
0.512(13.0)
0.102(2.6)
0.101(2.55)
0.043(1.1)
0.043(1.1)
0.020(0.5)
0.098(2.49)
0.169(4.3)
0.112(2.85)
0.098(2.5)
0.020(0.5)
0.130(3.3)
0.408(10.36)
0.283(7.2)
0.598(15.2)
0.543(13.8)
0.150(3.8)
0.112(2.85)
0.053(1.35)
0.053(1.35)
0.028(0.7)
0.102(2.59)
0.185(4.7)
0.128(3.25)
0.114(2.9)
0.028(0.7)
0.134(3.5)
150OC
0.35V
F
B
C
C
D
E
V(Typ)
Marking code
1
2
3
F
G
H
I
■ Features
M
G
E
H
J
• Low forward voltage drop.
D
K
• Excellent high temperature stability.
I
L
M
N
ØP
• Fast switching capability.
J
N
• Suffix "G" indicates Halogen-free part, ex.CSF10S45CTG-A.
• Lead free in compliance with EU RoHS.
Alternate
K
L
Dimensions in inches(millimeters)
symbol
A
ØP
Min
Max
A
B
0.383(9.72) 0.404(10.27)
F
■ Mechanical data
0.248(6.3)
0.571(14.5)
0.516(13.1)
-
0.094(2.4)
0.039(1.0)
0.039(1.0)
0.020(0.5)
0.095(2.41)
0.169(4.3)
0.055(1.4)
0.091(2.3)
0.014(0.35)
0.122(3.1)
0.272(6.9)
0.610(15.5)
0.547(13.9)
0.161(4.1)
0.126(3.2)
0.051(1.3)
0.051(1.3)
0.035(0.9)
0.105(2.67)
0.189(4.8)
0.122(3.1)
0.117(2.96)
0.031(0.8)
0.142(3.6)
B
C
C
D
E
• Epoxy : UL94-V0 rated flame retardant.
• Case : JEDEC ITO-220AB molded plastic body.
• Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026.
• Polarity: As marked.
• Mounting Position : Any.
Marking code
1
2
3
F
G
H
I
M
G
E
H
J
D
K
I
L
M
N
ØP
J
N
• Weight : Approximated 2.25 gram.
PIN 1
PIN 3
PIN 2
■ Maximum ratings and electrical characteristics
Rating at 25OC ambient temperature unless otherwise specified.
UNIT
Parameter
Conditions
Symbol
VRWM
IO
CSF10S45CT-A
V
A
Working peak reverse voltage
Forward rectified current (total device)
45
10
8.3ms single half sine-wave superimposed on
rate load (JEDEC method)
Forward surge current (per diode)
IFSM
A
250
Peak repetitive reverse surge current
(per diode)
IRRM
2us - 1kHz
2
A
OC/W
OC/W
OC
RθJC
RθJA
TSTG
TJ
Junction to case
8
Typical Thermal resistance (per diode)
Junction to ambient
50
Storage temperature
-55 ~ +150
-55 ~ +150
OC
Operating Junction temperature
Parameter
Conditions
IF = 3A, TJ = 25OC
IF = 5A, TJ = 25OC
Symbol
VF
MIN.
TYP.
370
MAX.
UNIT
Forward voltage drop (per diode)
435
IF = 5A, TJ = 125OC
350
mV
mA
V
VR = VRRM TJ = 25OC
VR = VRRM TJ = 125OC
IR = 0.5mA TJ = 25OC
0.5
IR
Reverse current (per diode)
100
VBR
Reverse Breakdown Voltage (per diode)
45
Document ID : DS-11KA8
Revised Date : 2016/12/19
Revision : C9
1
CITC [ Chip Integration Technology Corporation ]
