CSP8S45S-A
Super Low Barrier High Voltage Power Rectifier
Chip Integration Technology Corporation
Main Product Characteristics
■ Outline
8A
IF(AV)
VRRM
TJ
45V
150OC
TO-277
0.264 (6.70)
0.248 (6.30)
PIN 1
PIN 3
PIN 2
0.43V
V(Typ)
1
3
■ Features
0.077 (1.96)
0.069 (1.76)
0.073 (1.85)
2
0.069 (1.75)
• Low forward voltage drop.
• Excellent high temperature stability.
• Fast switching capability.
• Suffix "G" indicates Halogen-free part, ex.CSP8S45SG-A.
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
0.028 (0.71)
0.016 (0.41)
0.216 (5.48)
0.208 (5.28)
0.028 (0.71)
0.016 (0.41)
0.037 (0.95)
0.033 (0.85)
0.124 (3.15)
0.112 (2.85)
■ Mechanical data
0.037 (0.95)
0.033 (0.85)
• Epoxy : UL94-V0 rated flame retardant.
• Case : Molded plastic, TO-277.
• Lead : Solder plated, solderable per MIL-STD-750,
Method 2026.
• Polarity: Indicated by cathode band.
• Mounting Position : Any.
0.145 (3.69)
0.133 (3.39)
0.069 (1.74)
0.057 (1.44)
0.014 (0.35)
0.010 (0.25)
0.049 (1.25)
0.037 (0.95)
• Weight : Approximated 0.093 grams.
Dimensions in inches and (millimeters)
■ Maximum ratings and electrical characteristics
Rating at 25OC ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Parameter
Marking code
Conditions
Symbol
CSP8S45S-A
CSP8S45S
UNIT
V
Peak repetitive reverse voltage
Working peak reverse voltage
DC blocking voltage
VRRM
VRWM
VRM
45
RMS reverse voltage
VR(RMS)
IO
32
8
V
A
Forward rectified current
8.3ms single half sine-wave superimposed on
rate load (JEDEC method)
Forward surge current
IFSM
280
A
OC/W
OC
RθJC
Thermal resistance(1)
Junction to case
4
Operating and Storage temperature
TJ, TSTG
-55 ~ +150
Parameter
Conditions
IR = 0.5mA
IF = 8A, TJ = 25OC
Symbol
V(BR)R
MIN.
45
TYP.
430
MAX.
UNIT
V
Reverse breakdown voltage
470
450
0.3
15
mV
Forward voltage drop
VF
IF = 8A, TJ = 125OC
VR = VRRM TJ = 25OC
VR = VRRM TJ = 100OC
VR = VRRM TJ = 125OC
IR
Reverse current
mA
100
Note : 1.FR-4 PCB, 2oz.Copper.
2.Polymide PCB, 2oz.Copper.Cathode pad dimensions 18.8mm x 14.4mm.Anode pad dimensions 5.6mm x 14.4mm.
Document ID : DS-12KCV
Revised Date : 2015/08/11
Revision : C3
1
CITC [ Chip Integration Technology Corporation ]
