CTP10S200SG
Chip Integration Technology Corporation
10A Trench Schottky Rectifier
Main Product Characteristics
■Outline
IF(AV)
VRRM
TJ
10A
TO-277B
200V
175OC
0.63V
0.264 (6.70)
0.248 (6.30)
VF(Typ)
0.077 (1.96)
0.069 (1.76)
0.073 (1.85)
0.069 (1.75)
■ Features
• Low forward voltage drop.
• Excellent high temperature stability.
• Fast switching capability.
0.028 (0.71)
0.016 (0.41)
0.216 (5.48)
0.208 (5.28)
0.028 (0.71)
0.016 (0.41)
• Lead free in compliance with EU RoHS.
0.037 (0.95)
0.033 (0.85)
0.124 (3.15)
0.112 (2.85)
■ Mechanical data
0.037 (0.95)
0.033 (0.85)
• Epoxy : UL94-V0 rated flame retardant.
• Case : Molded plastic, TO-277B.
• Lead : Solder plated, solderable per MIL-STD-750,
Method 2026.
0.145 (3.69)
0.133 (3.39)
0.069 (1.74)
0.057 (1.44)
0.014 (0.35)
0.010 (0.25)
0.049 (1.25)
0.037 (0.95)
• Weight : Approximated 0.093 grams.
Dimensions in inches and (millimeters)
■ Maximum ratings and electrical characteristics
■Circuit Diagram
Rating at 25OC ambient temperature unless otherwise specified.
Parameter
Conditions
Symbol
VRWM
IO
CTP10S200SG
UNIT
Working peak reverse voltage
Forward rectified current
200
10
V
A
8.3ms single half sine-wave superimposed on
rate load (JEDEC method)
Forward surge current
IFSM
250
A
Peak repetitive reverse surge current
2us - 1kHz
IRRM
RθJC
RθJA
1
6
A
OC/W
OC/W
OC
Junction to case
Junction to ambient
Typical Thermal resistance
70
Storage temperature
TSTG
TJ
-55 ~ +150
-55 ~ +175
OC
Operating Junction temperature
Parameter
Conditions
IF = 3A, TJ = 25OC
IF = 10A, TJ = 25OC
Symbol
VF
MIN.
TYP.
680
MAX.
UNIT
mV
Forward voltage drop
780
840
IF = 10A, TJ = 125OC
630
VR = 200V TJ = 25OC
VR = 200V TJ = 125OC
IR = 0.1mA, TJ = 25OC
0.001
0.7
0.03
10
IR
Reverse current
mA
V
Reverse Breakdown Voltage
VBR
200
Document ID : DS-11K046
Revised Date : 2017/04/18
Revision : C
1
CITC [ Chip Integration Technology Corporation ]
