MH07N60CT
600V Silicon N-Channel Power MOSFET
■ Outline
■ Features
C
TO-220AB
A
Dimensions in inches(millimeters)
• Fast switching.
symbol
D
Min
10.10
15.0
8.90
4.30
2.30
1.20
0.70
0.35
1.17
3.30
12.70
2.34
2.40
3.70
Max
10.50
16.0
9.50
4.80
3.00
1.40
0.90
0.55
1.37
3.80
14.70
2.74
3.00
3.90
• ESD improved capability.
• Low gate charge.
• Low reverse transfer capacitances.
• 100% single pulse avalanche energy test.
A
B
B1
C
C1
D
E
F
Marking code
G
H
L
G
N
H
■ Mechanical data
Q
ØP
• Epoxy : UL94-V0 rated flame retardant.
• Case : JEDEC TO-220F molded plastic body.
• Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026.
Drain
E
N
N
F
C1
• Polarity: As marked.
Gate
• Mounting Position : Any.
• Weight : Approximated 2.25 gram.
Dimensions in inches and (millimeters)
Source
■ Absolute(TC = 25OC unless otherwise specified)
Symbol
VDSS
PARAMETER
CONDITIONS
MH07N60CT
UNIT
Drain-Source Voltage
600
7
V
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current(1)
Gate-Source Voltage
ID
TC = 100OC
A
4.5
IDM
VGS
EAS
IAR
28
±30
550
3.3
V
mJ
A
Single Pulse Avalanche Energy(2)
Avalanche Current(1)
Repetitive Avalanche Energy(1)
EAR
54
mJ
100
0.8
W
Power Dissipation
PD
Derating factor above 25OC
W/OC
V/ns
V
OC
OC
Peak Diode Recovery dv/dt(3)
Gate source ESD
dV/dt
VESD(G-S)
TJ, TSTG
TL
5.0
HBM-C = 100pf, R = 1.5kΩ
3000
-55 ~ +150
300
Operating and Storage Temperature Range
Maximum temperature for soldering
NOTE : 1.Repetitive rating; pulse width limited by maximum junction temperature.
2.L=10.0mH, ID = 10.5A, Start TJ = 25OC.
3.ISD =7A,di/dt ≤100A/us, VDD≤BVDS, Start TJ = 25OC.
Document ID : DS-21M67
Revised Date : 2015/09/16
Revision : C1
1
CITC [ Chip Integration Technology Corporation ]
