MJU05N70
Chip Integration Technology Corporation
700V Super Junction Power MOSFET
■ Features
■ Pin Description
• High speed power switching
• 100% UIS tested, 100% Rg tested
• Εnhanced avalanche ruggedness
• Lead free, halogen free
TO-251
■ Application
• SMPS
• Ηard switching and high speed circuit
• LED lighting
• Flyback
■ Main product characteristics
VDS
RDS(on),max 850mΩ
ID 5A
700V
■ Absolute Maximum Ratings (TA = 25OC unless otherwise specified)
Symbol
PARAMETER
CONDITIONS
MSL065N15G
UNIT
A
Continuous Drain Current
TC = 25OC
ID
VDS
5
700
Drain to Source Voltage
Gate to Source Voltage
V
VGS
±30
V
IDM
Pulsed Drain Current
14
A
L =8.0mH, TC =25OC
TC = 25OC
EAS
Avalanche energy, single pulse
Power Dissipation
100
mJ
W
OC
PD
35
Operating and Storage Temperature
TJ, TSTG
-55 to 150
■ Absolute Maximum Ratings
Symbol
RthJC
PARAMETER
Thermal Resistance Junction-case
Thermal Resistance Junction-Ambient
MSL065N15G
UNIT
OC/W
OC/W
1,2
RthJA
55
Document ID : DS-22M79
Revised Date : 2015/10/16
Revision : C
1
CITC [ Chip Integration Technology Corporation ]
