MJU07N60CT
Chip Integration Technology Corporation
600V Super Junction Power MOSFET
■ Features
■ Pin Description
TO-251
• High speed power switching
• 100% UIS tested, 100% Rg tested
• Εnhanced avalanche ruggedness
• Lead free, halogen free
■ Application
• SMPS
• Ηard switching and high speed circuit
• LED lighting
• Flyback
■ Main product characteristics
VDS
RDS(on),max 580mΩ
ID 7A
600V
■ Absolute Maximum Ratings (TA = 25OC unless otherwise specified)
Symbol
PARAMETER
CONDITIONS
MJU07N60CT
UNIT
A
Continuous Drain Current
TC = 25OC
ID
VDS
7
600
Drain to Source Voltage
Gate to Source Voltage
V
VGS
±30
V
IDM
Pulsed Drain Current
18
A
L =4.0mH, TC =25OC
TC = 25OC
EAS
Avalanche energy, single pulse
Power Dissipation
100
mJ
W
OC
PD
104
Operating and Storage Temperature
TJ, TSTG
-55 to 150
■ Absolute Maximum Ratings
Symbol
RthJC
PARAMETER
Thermal Resistance Junction-case
Thermal Resistance Junction-Ambient
MJU07N60CT
UNIT
OC/W
OC/W
1.2
RthJA
55
Document ID : DS-22M82
Revised Date : 2015/12/11
Revision : C
1